2sc5551a ON Semiconductor, 2sc5551a Datasheet
2sc5551a
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2sc5551a Summary of contents
Page 1
... To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. 2SC5551A SANYO Semiconductors NPN Epitaxial Planar Silicon Transistor High-Frequency Medium-Output ...
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... Continued from preceding page. Parameter DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage : The 2SC5551A is classified by 50mA follows : * Marking Rank 180 135 to 270 Package Dimensions unit : mm (typ) ...
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... Collector-to-Base Voltage 1000 I CP =600mA =300mA 3 2 100 Ta=25 °C Single pulse When mounted on ceramic substrate (250mm 1.0 10 Collector-to-Emitter Voltage 2SC5551A = 1.0 IT15252 10 f=1MHz 1.0 ...
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... SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of December, 2009. Specifications and information herein are subject to change without notice. 2SC5551A PS No. A1118-4/4 ...