2sc5551a ON Semiconductor, 2sc5551a Datasheet - Page 2

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2sc5551a

Manufacturer Part Number
2sc5551a
Description
Npn Epitaxial Planar Silicon Transistor
Manufacturer
ON Semiconductor
Datasheet

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Continued from preceding page.
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Package Dimensions
unit : mm (typ)
7007B-004
: The 2SC5551A is classified by 50mA h FE as follows :
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Marking
Rank
100
h FE
80
60
40
20
0
0
Parameter
Collector-to-Emitter Voltage, V CE -- V
4
90 to 180
EB E
E
I C -- V CE
8
135 to 270
EB F
F
12
h FE 1
h FE 2
f T
Cob
Cre
V CE (sat)
V BE (sat)
Symbol
16
100 μ A
I B =0 μ A
V CE =5V, I C =50mA
V CE =5V, I C =300mA
V CE =5V, I C =50mA
V CB =10V, f=1MHz
V CB =10V, f=1MHz
I C =50mA, I B =5mA
I C =50mA, I B =5mA
50 μ A
IT01066
2SC5551A
20
Conditions
1000
100
10
7
5
3
2
7
5
3
2
1.0
2
3
5 7 10
Collector Current, I C -- mA
min
h FE -- I C
90
20
2
3
Ratings
typ
0.07
5 7 100
3.5
2.9
1.5
0.8
max
2
270
4.0
0.3
1.2
No. A1118-2/4
V CE =5V
3
IT01067
5 7 1000
GHz
Unit
pF
pF
V
V

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