Power Transistors
2SC5841
Silicon NPN epitaxial planar type
Power supply for Audio & Visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2002
• High-speed switching (t
• Low collector-emitter saturation voltage V
• Superior forward current transfer ratio h
• Allowing supply with the radial taping (MT-4)
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Parameter
Parameter
T
T
stg
C
a
: storage time/t
= 25°C
= 25°C
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
I
P
I
T
CBO
CEO
EBO
V
CP
C
I
I
h
h
h
C
stg
CE(sat)
C
CBO
CEO
t
t
j
f
CEO
FE1
FE2
FE3
stg
t
on
= 25°C
T
f
FE
f
: fall time is short)
CE(sat)
linearity
−55 to +150
Rating
I
V
V
V
V
V
I
V
I
I
V
C
C
C
B1
150
CE
CB
CE
CE
CE
CE
CC
80
80
15
= 10 mA, I
= 3 A, I
= 1 A, Resistance loaded
5
3
5
2
= 0.1 A, I
SJD00298AED
= 10 V, I
= 80 V, I
= 80 V, I
= 4 V, I
= 4 V, I
= 4 V, I
= 50 V
B
= 375 mA
C
C
C
B2
Conditions
C
Unit
B
E
B
= 0.2 A
= 1 A
= 3 A
°C
°C
W
V
V
V
A
A
= 0.1 A, f = 10 MHz
= 0
= 0
= 0
= − 0.1 A
Marking Symbol: C5841
Internal Connection
0.65
0.35
2.5
±0.1
±0.1
±0.2
1 2 3
10.0
Min
80
50
80
20
B
±0.2
2.5
0.65
1.05
0.55
±0.2
0.15
Typ
100
0.2
0.9
±0.1
±0.1
±0.1
1.48
1.2
1.0
±0.1
±0.2
±0.2
C
E
MT-4-A1 Package
Max
100
100
280
0.7
5.0
1: Base
2: Collector
3: Emitter
±0.1
Unit: mm
0.55
MHz
2.25
Unit
C 1.0
µA
µA
±0.1
µs
µs
µs
V
V
±0.2
1