2sc5954q Panasonic Corporation of North America, 2sc5954q Datasheet
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2sc5954q
Manufacturer Part Number
2sc5954q
Description
Silicon Npn Triple Diffusion Planar Type For Power Amplification With High Forward Current Transfer Ratio
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC5954Q.pdf
(2 pages)
Power Transistors
2SC5954
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
I Features
I Absolute Maximum Ratings T
I Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2004
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• Full-pack package which can be installed to the heat sink with one
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
screw.
2. * : Rank classification
Rank
Parameter
h
Parameter
FE1
500 to 1 500
T
a
= 25°C
Q
FE
C
Symbol
which has satisfactory linearity.
V
V
V
= 25°C ± 3°C
Symbol
1 300 to 2 300
T
V
I
P
I
T
h
CBO
CEO
EBO
V
CP
C
I
I
I
h
C
stg
CE(sat)
C
FE1
j
CBO
CEO
EBO
t
t
f
CEO
FE2
stg
t
on
= 25°C
T
f
*
P
CE(sat)
−55 to +150
Rating
I
V
V
V
V
V
I
V
I
I
V
C
C
C
B1
150
2.0
CB
CE
EB
CE
CE
CE
CC
80
60
25
= 10 mA, I
= 1 A, I
= 1 A, Resistance loaded
6
3
6
= 0.1 A, I
SJD00319AED
= 80 V, I
= 40 V, I
= 6 V, I
= 4 V, I
= 4 V, I
= 10 V, I
= 50 V
B
= 20 mA
C
C
C
B2
Conditions
Unit
B
E
B
C
= 0
= 0.5 A
= 3 A
°C
°C
W
V
V
V
A
A
= 0
= 0
= 0
= 0.1 A, f = 10 MHz
= − 0.1 A
Internal Connection
1
9.9
Min
500
100
2
60
±0.3
B
3
2.54
5.08
0.8
1.6
1.4
±0.1
±0.2
±0.30
±0.50
±0.2
φ 3.2
Typ
200
0.2
1.5
0.1
±0.1
TO-220D-A1 Package
C
E
2 300
Max
100
100
100
0.6
4.6
1: Base
2: Collector
3: Emitter
±0.2
0.55
Unit: mm
2.9
2.6
MHz
Unit
±0.15
µA
µA
µA
µs
µs
µs
V
V
±0.2
±0.1
1
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2sc5954q Summary of contents
Page 1
Power Transistors 2SC5954 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio I Features • High forward current transfer ratio h FE • Low collector-emitter saturation voltage V • Full-pack package which can be ...
Page 2
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...