2sc5913 Panasonic Corporation of North America, 2sc5913 Datasheet
2sc5913
Manufacturer Part Number
2sc5913
Description
Silicon Npn Triple Diffusion Mesa Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC5913.pdf
(3 pages)
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Power Transistors
2SC5913
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV, CRT Monitor
I Features
I Absolute Maximum Ratings T
Note) * : Non-repetitive peak collector current
I Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2004
• High breakdown voltage: V
• Wide safe operation area
• Built-in dumper diode
Collector-base voltage (Emitter open)
Collector-emitter voltage (E-B short)
Emitter-base voltage (Collector open)
Base current
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Emitter-base voltage (Collector open)
Forward voltage
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Fall time
Parameter
Parameter
*
T
a
= 25°C
CBO
≥ 1 500 V
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
I
I
T
CBO
EBO
V
CES
CP
C
I
B
C
stg
CE(sat)
BE(sat)
C
h
j
V
CBO
t
f
EBO
stg
t
FE
= 25°C
T
f
F
−55 to +150
Rating
I
I
V
V
V
I
I
V
I
I
1 500
1 500
E
F
C
C
C
B1
150
CB
CB
CE
CE
40
= 3 A
= 500 mA, I
= 3 A, I
= 3 A, I
= 3 A, Resistance loaded
5
3
6
9
3
= 0.75 A, I
SJD00309AED
= 1 000 V, I
= 1 500 V, I
= 5 V, I
= 10 V, I
B
B
= 0.75 A
= 0.75 A
C
Conditions
Unit
C
= 3 A
°C
°C
B2
W
C
V
V
V
A
A
A
= 0.1 A, f = 0.5 MHz
= 0
E
E
= −1.5 A
= 0
= 0
Internal Connection
5˚
B
1
15.5
10.9
Min
5
5
2
±0.5
±0.5
3
5.45
(4.0)
2.0
1.1
φ 3.2
Typ
±0.2
±0.1
3
±0.3
±0.1
TOP-3E-A1 Package
E
5˚
Max
2.5
1.5
5.0
0.5
−2
50
10
1
5˚
EIAJ: SC-94
1: Base
2: Collector
3: Emitter
0.7
C
Unit: mm
5˚
3.0
5˚
±0.1
MHz
5˚
Unit
mA
µA
µs
µs
±0.3
V
V
V
V
1
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2sc5913 Summary of contents
Page 1
... Power Transistors 2SC5913 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT Monitor I Features • High breakdown voltage: V ≥ 1 500 V CBO • Wide safe operation area • Built-in dumper diode I Absolute Maximum Ratings T Parameter Symbol Collector-base voltage (Emitter open) ...
Page 2
... P ( (2) With a 100 × 100 × heat sink (3) Without heat sink ( (2) ( 100 125 150 ( °C ) Ambient temperature Safe operation area 100 100 µ ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...