mje13007-tf3-t Unisonic Technologies, mje13007-tf3-t Datasheet - Page 2

• Manufacturer Part Number: mje13007-tf3-t
• Description: Npn Bipolar Power Transistor For Switching Power Supply Applications
• Manufacturer: Unisonic Technologies

MJE13007
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current-Gain-Bandwidth Product
Output Capacitance
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
Fall Time
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Voltage
Collector Current
Base Current
Emitter Current
Total Device Dissipation
Operating and Storage Junction Temperature Range
THERMAL DATA
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATING
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package
(in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a
mounting torque of 6 to 8•lbs.
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
SYMBOL
V
V
V
CEO(SUS)
CE(SAT)
BE(SAT)
h
h
I
I
C
CBO
EBO
FE1
FE2
f
t
t
t
t
D
R
S
T
F
ob
Continuous
Peak (1)
Continuous
Peak (1)
Continuous
Peak (1)
T
C
= 25℃
(T
I
V
V
V
I
I
I
I
I
I
I
I
I
I
V
V
I
Duty Cycle 1.0%
C
C
C
C
C
C
C
C
C
C
C
C
B1
=25℃, unless otherwise noted)
CBO
CBO
EB
CB
CC
=10mA, I
=2.0A, V
=5.0A, V
=2.0A, I
=5.0A, I
=8.0A, I
=5.0A, I
=2.0A, I
=5.0A, I
=5.0A, I
=500mA, V
=I
=9.0V, I
=10V, I
=125V, I
B2
=700V
=700V, T
=1.0A, t
TEST CONDITIONS
B
B
B
B
B
B
B
SYMBOL
SYMBOL
CE
CE
=0.4A
=1.0A
=2.0A
=1.0A, T
=0.4A
=1.0A
=1.0A, T
B
E
≦
T
C
=0
=0, f=0.1MHz
C
V
V
J,
V
=0
=5.0V
=5.0V
CE
I
I
I
θ
θ
=5.0A,
P
CEO
CBO
I
CM
EBO
I
BM
I
EM
C
T
p
C
B
E
JC
JA
D
=25µs,
=125℃
=10V, f=1.0 MHz
STG
C
C
=100℃
=100℃
NPN SILICON TRANSISTOR
-65 ~ +125
RATINGS
RATINGS
1.56
62.5
400
700
9.0
8.0
4.0
8.0
16
12
24
80
MIN
400
8.0
5.0
4.0
0.025
TYP
0.23
0.5
1.8
80
14
MAX UNIT
100
QW-R203-019.D
0.1
1.0
1.0
2.0
3.0
3.0
1.2
1.6
1.5
0.1
1.5
3.0
0.7
40
30
UNIT
UNIT
℃
℃
℃
W
2 of 6
V
V
V
A
A
A
A
A
A
/W
/W
MHz
mA
mA
µA
pF
µs
V
V
V
V
V
V
V
V