2sa2161j Panasonic Corporation of North America, 2sa2161j Datasheet

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2sa2161j

Manufacturer Part Number
2sa2161j
Description
Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet

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Company:
Part Number:
2SA2161J
Quantity:
18 000
Company:
Part Number:
2SA2161J
Quantity:
18 000
Transistors
2SA2161J
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC6037J
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2004
• Low collector-emitter saturation voltage V
• SS-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
stg
C
CE(sat)
C
C
h
CBO
j
f
CBO
CEO
EBO
= 25°C
FE
T
ob
CE(sat)
−55 to +125
Rating
I
I
I
V
V
I
V
V
−500
C
C
E
C
−15
−12
125
125
CB
CE
CB
CB
−5
−1
= −10 µA, I
= −1 mA, I
= −10 µA, I
= −200 mA, I
SJC00312BED
= −2 V, I
= −15 V, I
= −2 V, I
= 10 V, I
Conditions
Unit
mW
B
C
E
mA
E
°C
°C
E
C
V
V
V
A
E
= 0
= −10 mA
= 0, f = 1 MHz
= 10 mA, f = 200 MHz
= 0
= 0
B
= 0
= −10 mA
Marking Symbol: 2U
0.27
±0.02
(0.50)(0.50)
1.60
1.00
1
3
Min
−15
−12
270
−5
+0.05
–0.03
±0.05
2
EIAJ: SC-89, JEDEC: SOT-490
Typ
200
4.5
SSMini3-F1 Package
− 0.1
−250
Max
680
0.12
1: Base
2: Emitter
3: Collector
+0.03
–0.01
Unit: mm
MHz
Unit
mV
µA
pF
V
V
V
1

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2sa2161j Summary of contents

Page 1

... Transistors 2SA2161J Silicon PNP epitaxial planar type For general amplification Complementary to 2SC6037J ■ Features • Low collector-emitter saturation voltage V • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...

Page 2

... 140 120 100 100 120 140 ( °C ) Ambient temperature T a  CE(sat) C − 85° − 0.1 −25°C 25°C − 0.01 − 0.1 −1 −10 −100 −1 000 ( Collector current I ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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