2sa2118 Panasonic Corporation of North America, 2sa2118 Datasheet
2sa2118
Manufacturer Part Number
2sa2118
Description
Power Transistors Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SA2118.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SA2118
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Power Transistors
2SA2118
Silicon PNP epitaxial planar type
For power amplification
For TV vertical deflection output
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: July 2004
• Satisfactory linearity of forward current transfer ratio h
• Dielectric breakdown voltage of the package: 5 kV
• Full-pack package which can be installed to the heat sink with one
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
screw.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE1
T
60 to 140
a
= 25°C
Q
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
I
P
CBO
I
T
V
V
V
h
CEO
EBO
C
CP
I
I
stg
V
h
C
CE(sat)
C
FE1
CBO
100 to 240
j
EBO
f
CBO
CEO
EBO
FE2
= 25°C
BE
T
*
P
−55 to +150
Rating
I
I
I
V
V
V
V
V
I
V
−200
−180
C
C
E
C
150
CE
CB
EB
CE
CE
CE
2.0
−6
−2
−3
25
= −50 µA, I
= −5 mA, I
= −500 µA, I
= −500 mA, I
SJD00315AED
= −10 V, I
= −10 V, I
= −4 V, I
= −10 V, I
= −10 V, I
= −200 V, I
FE
Conditions
Unit
B
C
°C
°C
E
W
C
V
V
V
A
A
C
C
C
= 0
= 0
C
= 0
B
E
= − 0.5 A, f = 10 MHz
= −400 mA
= −150 mA
= −400 mA
= 0
= 0
= −50 mA
1
9.9
−200
−180
Min
2
−6
60
50
±0.3
3
2.54
5.08
0.8
1.6
1.4
±0.1
±0.2
±0.30
±0.50
±0.2
Typ
φ 3.2
30
±0.1
TO-220D-A1 Package
Max
−50
−50
240
−1
−1
4.6
1: Base
2: Collector
3: Emitter
±0.2
0.55
Unit: mm
MHz
2.9
2.6
Unit
±0.15
µA
µA
V
V
V
V
V
±0.2
±0.1
1
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2sa2118 Summary of contents
Page 1
... Power Transistors 2SA2118 Silicon PNP epitaxial planar type For power amplification For TV vertical deflection output ■ Features • Satisfactory linearity of forward current transfer ratio h • Dielectric breakdown voltage of the package • Full-pack package which can be installed to the heat sink with one screw. ■ ...
Page 2
... ( (2) With a 100 × 100 × heat sink (3) Without heat sink 100 120 140 160 ( °C ) Ambient temperature Safe operation area 10 = 25°C Non repetitive pulse, T ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...