2sc2733 HITACHI, 2sc2733 Datasheet - Page 2

• Manufacturer Part Number: 2sc2733
• Description: Silicon Npn Epitaxial
• Manufacturer: HITACHI

2SC2733
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
Collector to emitter saturation
voltage
DC current transfer ratio
Gain bandwidth product
Collector output capacitance
Conversion gain
Noise figure
Note: Marking is “HC”.
2
Symbol
V
V
V
I
V
h
f
Cob
CG
NF
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
Min
30
20
3
—
—
60
600
—
—
—
Symbol
V
V
V
I
P
Tj
Tstg
Typ
—
—
—
—
—
120
1000
0.35
21
4.0
C
CBO
CEO
EBO
C
Max
—
—
—
0.5
1.0
—
—
0.65
—
—
Unit
V
V
V
µA
V
MHz
pF
dB
dB
Ratings
30
20
3
50
150
150
–55 to +150
Test conditions
I
I
I
V
I
V
V
V
f = 1 MHz
V
f = 200 MHz,
f
f
V
f = 200 MHz,
f
f
C
C
E
C
OSC
out
OSC
out
CB
CE
CE
CB
CC
CC
= 10 µA, I
= 10 µA, I
= 1 mA, R
= 20 mA, I
= 30 MHz
= 30 MHz
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, Emitter ground,
= 12 V, I
= 12 V, I
= 230 MHz (0dBm),
= 230 MHz (0dBm),
E
E
C
C
Unit
V
V
V
mA
mW
°C
°C
C
C
C
BE
B
= 0
= 0
= 0
= 10 mA
= 10 mA
= 2 mA,
= 2 mA,
= 4 mA
=