2sc4562 Panasonic Corporation of North America, 2sc4562 Datasheet
2sc4562
Manufacturer Part Number
2sc4562
Description
Silicon Npn Epitaxial Planer Type For High-frequency Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SC4562.pdf
(3 pages)
Transistors
2SC4562
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1748
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• High transition frequency f
• Small collector output capacitance (Common base, input open cir-
• S-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
cuited) C
and automatic insertion through the tape packing
2. * : Rank classification
ob
Rank
Parameter
Parameter
h
FE
200 to 400
*
Q
T
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
P
CBO
I
T
V
V
V
CEO
EBO
a
250 to 500
I
I
stg
C
CE(sat)
C
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
ob
R
−55 to +150
Rating
I
I
I
V
V
V
I
V
V
C
C
E
C
150
150
CB
CE
CE
CB
CB
50
50
50
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10 mA, I
5
SJC00159BED
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
B
C
E
Conditions
Unit
B
mW
B
C
E
E
E
mA
= 0
°C
°C
= 0
= 0
V
V
V
= 2 mA
= 1 mA
= 0
= 0
= −2 mA, f = 200 MHz
= 0, f = 1 MHz
Marking Symbol: AM
10˚
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
±0.1
±0.2
Min
200
50
50
5
2
0.06
Typ
250
1.5
SMini3-G1 Package
Max
0.30
100
500
0.1
0.15
EIAJ: SC-70
1: Base
2: Emitter
3: Collector
+0.10
–0.05
Unit: mm
MHz
Unit
µA
µA
pF
V
V
V
V
1
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2sc4562 Summary of contents
Page 1
... Transistors 2SC4562 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA1748 ■ Features • High transition frequency f T • Small collector output capacitance (Common base, input open cir- cuited • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing ■ ...
Page 2
... 200 160 120 120 160 ( °C ) Ambient temperature T a CE(sat) C 100 = 75° 25°C 0.1 −25°C 0. 100 1 000 Collector current MHz = 25° ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...