2sc4926yd-tl-e Renesas Electronics Corporation., 2sc4926yd-tl-e Datasheet
2sc4926yd-tl-e
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2sc4926yd-tl-e Summary of contents
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Silicon NPN Epitaxial Application VHF / UHF wide band amplifier Features High gain bandwidth product GHz Typ T High gain, low noise figure PG = 16.5 dB Typ 1.1 dB Typ ...
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Electrical Characteristics Item Collector to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product S Parameter 21 Power gain Noise figure Rev.3.00 Aug 10, 2005 page ...
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Main Characteristics Maximum Collector Dissipation Curve 150 100 Ambient Temperature Ta (°C) Gain Bandwidth Product vs. Collector Current Collector Current I ...
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Rev.3.00 Aug 10, 2005 page S21 Parameter vs. Collector Current GHz Collector Current I (mA ...
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S11 Parameter vs. Frequency 1.0 1 –.2 –.4 –.6 –.8 –1 Condition 200 to 2000 MHz (200 MHz step) (I ...
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S Parameter Freq. S11 (MHz) MAG. ANG. 200 0.777 –53.1 400 0.647 –90.3 600 0.579 –115.4 800 0.538 –134.3 1000 0.513 –147.5 1200 0.508 –159.4 1400 0.500 –168.3 1600 0.501 –177.3 1800 0.508 176.2 2000 0.510 169.6 S Parameter ...
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... A-A Section Ordering Information Part Name 2SC4926YD-TL-E 3000 Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.3.00 Aug 10, 2005 page Package Name MASS[Typ.] MPAK-4 / MPAK-4V 0.013g ...
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Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead ...