2sc4992 HITACHI, 2sc4992 Datasheet
2sc4992
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2sc4992 Summary of contents
Page 1
... Silicon NPN Bipolar Transistor Application VHF & UHF wide band amplifire Features • High gain bandwidth product f = 9.5 GHz typ T • High gain, low noise figure PG = 15.0 dB typ 1.2 dB typ 900 MHz Table 1 Absolute Maximum Ratings (Ta = 25°C) Item ——————————————————————————————————————————— ...
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... Note: Marking of 2SC4992 is "YR–". Attention: This device is very sensitive to electro static discharge. ...
Page 3
... Collector Current I (mA current transfer ratio vs. collector current 200 160 120 200 0.1 0.2 0 Collector Current I Collector output capacitance vs. collector to base voltage 1.6 1.4 1.2 1.0 0.8 0.6 0 Collector to Base Voltage V 2SC4992 (mA MHz (V) CB ...
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... Power gain vs. collector current 900 MHz Collector Current I (mA) C S21 parameter vs. collector current GHz Collector Current I (mA) C Noise figure vs. collector current ...
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... Condition 200 to 2000 MHz (200 MHz step 2SC4992 Scale div. 90° 60° 30° 0° –30° –60° mA mA ...
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... Table 3 S Parameter ( S11 S21 ——————— ——————— f (MHz) MAG ANG MAG ——————————————————————————————————————————— ...