2sc3976 Panasonic Corporation of North America, 2sc3976 Datasheet - Page 2

• Manufacturer Part Number: 2sc3976
• Description: Silicon Npn Triple Diffusion Planar Type For High Breakdown Voltage High-speed Switching
• Manufacturer: Panasonic Corporation of North America

Power Transistors
2
10000
3000
1000
200
150
100
100
300
100
0.3
0.1
50
30
10
30
10
0
3
1
0.1
Collector to base voltage V
0
1
Ambient temperature Ta ( ˚C )
(1)
(2)
20
25˚C
Collector current I
0.3
40
T
3
V
C
=–25˚C
C
BE(sat)
1
P
ob
60
C
100˚C
(1) T
(2) With a 100 100 2mm
(3) Without heat sink
(3)
— V
— Ta
Al heat sink
(P
80
10
3
C
=Ta
C
— I
=3.5W)
100
CB
10
C
C
120
30
I
f=1MHz
T
E
( A )
30
C
I
=0
C
CB
140
=25˚C
/I
B
=5
( V )
160
100
100
1000
0.03
0.01
300
100
100
0.3
0.1
24
20
16
12
30
10
30
10
Collector to emitter voltage V
8
4
0
3
1
3
1
0.1
0
0
Collector current I
Collector current I
0.3
25˚C
T
2
C
=100˚C
t
on
5
t
stg
I
, t
h
4
1
C
FE
stg
–25˚C
— V
, t
— I
10
3
6
f
— I
CE
Pulsed t
Duty cycle=1%
I
(2I
V
T
C
C
C
CC
/I
t
B1
=25˚C
on
10
B
8
=200V
=5
=–I
C
C
C
t
15
I
f
T
B
B2
C
=700mA
w
=25˚C
V
( A )
( A )
30
=1ms
10
)
CE
600mA
500mA
400mA
300mA
200mA
100mA
CE
=5V
100
12
20
( V )
0.03
0.01
0.03
0.01
100
100
100
0.3
0.1
0.3
0.1
0.3
0.1
30
10
30
10
30
10
Area of safe operation (ASO)
Collector to emitter voltage V
3
1
3
1
0.01
3
1
0.1
1
–25˚C
I
I
CP
C
0.03
0.3
Collector current I
Collector current I
25˚C
3
10ms
V
CE(sat)
0.1
10
1
f
T
T
C
=100˚C
— I
DC
0.3
30
Non repetitive pulse
T
3
— I
C
=25˚C
C
2SC3976
100
10
C
1
C
C
V
f=1MHz
T
t=0.5ms
C
CE
300
=25˚C
( A )
( A )
30
I
3
C
=10V
1ms
/I
CE
B
=5
1000
100
10
( V )