2sc3965 Panasonic Corporation of North America, 2sc3965 Datasheet - Page 2

• Manufacturer Part Number: 2sc3965
• Description: Silicon Npn Epitaxial Planar Type
• Manufacturer: Panasonic Corporation of North America

Transistor
2
0.03
0.01
100
1.2
1.0
0.8
0.6
0.4
0.2
0.3
0.1
30
10
10
0
3
1
8
6
4
2
0
Collector to base voltage V
0
1
1
Ambient temperature Ta ( ˚C )
Collector current I
20
3
3
40
V
10
C
10
CE(sat)
P
60
ob
C
— V
— Ta
30
30
80
— I
100
CB
100
100
C
–25˚C
C
Ta=75˚C
25˚C
120
I
f=1MHz
Ta=25˚C
E
( mA )
=0
300
300
I
C
CB
140
/I
B
=10
1000
1000
( V )
160
1000
120
100
240
200
160
120
300
100
0.3
0.1
80
60
40
20
80
40
30
10
Collector to emitter voltage V
Collector to emitter voltage V
0
0
3
1
Area of safe operation (ASO)
0
1
1
Collector current I
10
3
3
Ta=75˚C
25˚C
I
20
10
10
h
C
I
I
FE
CP
C
–25˚C
— V
— I
30
30
30
I
B
=2.0mA
CE
C
t=1s
100
100
40
C
Ta=25˚C
Single pulse
V
CE
t=2.0ms
( mA )
Ta=25˚C
300
300
50
=50V
1.6mA
1.2mA
1.0mA
0.8mA
0.6mA
0.4mA
0.2mA
CE
CE
1000
1000
60
( V )
( V )
240
200
160
120
240
200
160
120
80
40
80
40
0
0
–1
0
Base to emitter voltage V
Ta=75˚C
Emitter current I
0.4
–3
I
C
f
25˚C
T
0.8
— V
— I
–10
–25˚C
BE
E
1.2
2SC3965
E
–30
( mA )
V
V
Ta=25˚C
1.6
CE
BE
CB
=5V
=30V
( V )
–100
2.0