2sc3648l-ab3-r Unisonic Technologies, 2sc3648l-ab3-r Datasheet - Page 3

• Manufacturer Part Number: 2sc3648l-ab3-r
• Description: Npn Epitaxial Silicon Transistor
• Manufacturer: Unisonic Technologies

2SC3648
■
1000
100
800
700
600
500
400
300
200
100
800
400
200
TYPICAL CHARACTERICS
600
1.0
10
0
0
5
3
2
7
5
3
2
7
1.0
0
0
100mA
90mA
V
Collector to Emitter Voltage, V
UNISONIC TECHNOLOGIES CO., LTD
CE
www.unisonic.com.tw
Collector to Base Voltage , V
= 5V
2
Base to Emitter Voltage, V
0.2
200
3
0.4
5
60mA
400
7
50mA
C
10
I
80mA
70mA
I
ob
C
C
40mA
30mA
20mA
10mA
- V
- V
0.6
- V
NPN EPITAXIAL SILICON TRANSISTOR
CE
BE
CB
600
2
0.8
3
BE
CE
CB
(V)
5
(mV)
(V)
800
F= 1MH
1.0
7
100
I
B
=0
1000
1.2
Z
2
1000
1000
1.0
800
400
200
10
0.1
600
100
10
0
7
5
3
7
5
3
7
5
3
2
2
2
5
3
7
5
3
2
7
2
7
5
3
3
0
3
I
Pulse
C
/I
5
Collector to Emitter Voltage, V
5
4.0mA
B
10
=10
7
7
10
10
Collector Current , I
Collector Current , I
20
2
2
3.5mA
3
3.0mA
1.5mA
30
3
2.5mA
2.0mA
1.0mA
0.5mA
V
I
V
V
V
C
CE
CE
CE
CE(sat)
5
- V
5
h
=2V
=5V
=10V
FE
40
7
7
CE
100
100
- I
- I
C
C
C
50
C
(mA)
2
(mA)
2
3
3
QW-R208-038,A
CE
60
(V)
5
5
7
7
70
1000
1000
I
B
=0
3
80
2
2