2n7002l-al3-r Unisonic Technologies, 2n7002l-al3-r Datasheet - Page 4

• Manufacturer Part Number: 2n7002l-al3-r
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Unisonic Technologies

2N7002
1.5
0.5
1.25
1.6
1. 8
1.75
0.75
1.2
0.4
1.5
0.5
2
0
TYPICAL CHARACTERISTICS
1
2
0
2
1
0
0
- 50
V
On-Resistance Varisation with Temperature
V
I
D
DS
GS
UNISONIC TECHNOLOGIES CO., LTD
=500mA
www.unisonic.com.tw
- 25
=10V
=10V
Gate to Source Voltage, V
1
On-Resistance Characteristics
2
Drain-Source Voltage, V
Junction Temperature, T
Transfer Characteristics
0
V
GS
=10V
25
2
4
50
9.0V
6
3
75
8.0V
GS
7.0V
DS
J
100
25℃
(V)
(V)
(°C)
8
4
6.0V
125℃
5.0V
4.0V
125
3.0V
10
150
5
0.95
0.85
1.05
2.5
1.5
0.9
0.8
0.5
1.1
2.5
1.5
0.5
0
3
2
1
1
3
2
1
-50
0
0
V
Gate Threshold Varisation with Temperature
GS
=4.0V
-25
On-Resistance Varisation with Drain
On-Resistance Varisation with Gate
0.4
0.4
Junction Temperature, T
Voltage and Drain Current
4.5V
Current and Temperature
V
0
GS
=10V
5.0V
Drain Current,I
Drain Current, I
25
0.8
0.8
T
J
= 125℃
50
25℃
Power MOSFET
6.0V
1.2
1.2
75
D
D
(A)
(A)
J
100
(°C)
7.0V
V
I
D
8.0V
1.6
1.6
QW-R206-037,F
GS
= 1mA
9.0V
125
= V
10V
DS
150
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