si7112dn-t1 Vishay, si7112dn-t1 Datasheet - Page 2
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si7112dn-t1
Manufacturer Part Number
si7112dn-t1
Description
N-channel 30-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet
1.SI7112DN-T1.pdf
(6 pages)
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Si7112DN
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
www.vishay.com
2
MOSFET SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
b
60
48
36
24
12
0
0
a
a
1
V
V
DS
GS
Output Characteristics
a
- Drain-to-Source Voltage (V)
= 10 thru 3 V
2
a
Symbol
3
V
r
J
I
DS(on)
t
t
I
C
I
V
C
GS(th)
D(on)
C
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
g
R
= 25 °C, unless otherwise noted
t
oss
t
t
SD
rss
iss
rr
fs
gs
gd
r
f
g
rr
g
2.5 V
4
V
V
V
DS
I
DS
D
DS
= 15 V, V
I
≅ 1 A, V
F
5
V
= 30 V, V
V
= 15 V, V
V
V
V
V
V
= 3.2 A, di/dt = 100 A/µs
V
DS
DS
I
GS
DS
S
DD
DS
DS
GS
Test Conditions
= 3.2 A, V
= 0 V, V
= V
= 10 V, I
= 15 V, I
= 30 V, V
≥ 5 V, V
= 15 V, R
= 4.5 V, I
GEN
f = 1 MHz
GS
GS
GS
GS
, I
= 4.5 V, I
= 10 V, R
= 0 V, T
GS
= 0 V, f = 1 MHz
D
GS
D
D
GS
GS
D
= 250 µA
L
= 17.8 A
= 17.8 A
= ± 12 V
= 10 V
= 17 A
= 15 Ω
= 0 V
= 0 V
J
D
g
= 55 °C
= 17.8 A
= 6 Ω
60
48
36
24
12
0
0.0
0.5
V
GS
Transfer Characteristics
Min
0.6
0.5
40
- Gate-to-Source Voltage (V)
1.0
T
0.0065
C
0.006
25 °C
Typ
260
340
145
= 125 °C
0.7
6.2
3.1
1.2
97
18
10
10
65
10
30
18
S-60926-Rev. F, 29-May-06
Document Number: 72864
1.5
0.0075
0.0082
± 100
Max
100
1.5
1.2
1.8
27
15
15
15
60
1
5
2.0
- 55 °C
Unit
nC
nC
nA
µA
pF
ns
Ω
Ω
V
A
S
V
2.5