si7112dn-t1 Vishay, si7112dn-t1 Datasheet - Page 3
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si7112dn-t1
Manufacturer Part Number
si7112dn-t1
Description
N-channel 30-v D-s Fast Switching Mosfet
Manufacturer
Vishay
Datasheet
1.SI7112DN-T1.pdf
(6 pages)
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Quantity
Price
Company:
Part Number:
SI7112DN-T1
Manufacturer:
VISHAY
Quantity:
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Manufacturer:
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Part Number:
si7112dn-t1-E3
Manufacturer:
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Part Number:
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TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72864
S-60926-Rev. F, 29-May-06
0.015
0.012
0.009
0.006
0.003
0.000
10
60
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
5
DS
On-Resistance vs. Drain Current
0.2
= 17.8 A
12
= 15 V
V
SD
10
T
Q
J
- Source-to-Drain Voltage (V)
= 150 °C
g
I
0.4
D
V
- Total Gate Charge (nC)
GS
- Drain Current (A)
15
Gate Charge
24
= 4.5 V
20
0.6
36
25
0.8
V
GS
30
T
= 10 V
J
48
= 25 °C
1.0
35
40
1.2
60
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
3500
3000
2500
2000
1500
1000
1.6
1.4
1.2
1.0
0.8
0.6
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
C
V
I
D
GS
oss
= 17.8 A
5
= 10 V
V
T
2
GS
V
J
0
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
I
D
- Drain-to-Source Voltage (V)
10
= 17.8 A
25
Capacitance
4
50
Vishay Siliconix
15
C
iss
75
6
Si7112DN
20
C
www.vishay.com
100
rss
8
25
125
150
10
30
3