si7196dp Vishay, si7196dp Datasheet

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si7196dp

Manufacturer Part Number
si7196dp
Description
N-channel 30-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7196DP
Manufacturer:
SAM
Quantity:
68
Part Number:
si7196dp-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7196dp-T1-GE3
Manufacturer:
CY
Quantity:
123
Part Number:
si7196dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 70 °C/W.
g. Package Limited.
Document Number: 70336
S-72519-Rev. B, 03-Dec-07
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
Ordering Information: Si7196DP-T1-E3 (Lead (Pb)-free)
8
C
6.15 mm
D
= 25 °C.
0.0145 at V
0.011 at V
7
D
r
6
DS(on)
D
PowerPAK SO-8
5
GS
Bottom View
GS
D
(Ω)
J
= 10 V
= 4.5 V
= 150 °C)
b, f
1
S
N-Channel 30-V (D-S) MOSFET
2
S
3
I
D
S
16
16
5.15 mm
(A)
4
g
g
G
a
d, e
A
= 25 °C, unless otherwise noted
Q
13.2 nC
Steady State
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
C
C
A
A
C
A
C
C
A
A
(Typ)
t ≤ 10 s
New Product
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Extremely Low Q
• 100 % R
• 100 % Avalanche Tested
• Notebook
• Core Voltage High-Side
• System Power Low-Side
Symbol
Symbol
T
R
R
for Switching Losses
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJC
thJA
GS
DS
AS
D
S
D
stg
g
Tested
Typical
G
2.4
21
gd
N-Channel MOSFET
WFET
- 55 to 150
15.8
12.7
4.5
3.2
Limit
± 20
41.6
26.6
5
260
16
16
16
30
50
20
20
b, c
b, c
b, c
®
D
S
g
g
b, c
b, c
g
Technology
Maximum
3.0
25
Vishay Siliconix
Si7196DP
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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si7196dp Summary of contents

Page 1

... Bottom View Ordering Information: Si7196DP-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation ...

Page 2

... Si7196DP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... Q - Total Gate Charge (nC) g Gate Charge Document Number: 70336 S-72519-Rev. B, 03-Dec-07 New Product 2000 1600 1200 Si7196DP Vishay Siliconix ° 125 ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... Si7196DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.2 0 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 New Product 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 150 120 = 250 µ ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.20 1.76 1.32 0.88 0.44 0.00 100 125 150 = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7196DP Vishay Siliconix 125 150 100 125 T - Case Temperature (°C) C Power, Junction-to-Ambient www.vishay.com 150 5 ...

Page 6

... Si7196DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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