si7196dp Vishay, si7196dp Datasheet - Page 4

• Manufacturer Part Number: si7196dp
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

Si7196DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
- 0.6
- 0.8
100
0.4
0.2
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
T
0.4
J
25
- Temperature (°C)
50
0.6
I
D
= 250 µA
75
0.01
100
0.1
0.8
10
1
T
0.01
J
100
= 25 °C
Safe Operating Area, Junction-to-Ambient
*Limited by r
*V
GS
1.0
125
V
minimum V
Single Pulse
0.1
T
DS
New Product
A
150
DS(on)
1.2
= 25 °C
- Drain-to-Source Voltage (V)
GS
at which r
1
DS(on)
0.05
0.04
0.03
0.02
0.01
0.00
10
150
120
is specified
90
60
30
0
0.001
2
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
100
0.01
V
4
GS
- Gate-to-Source Voltage (V)
Time (s)
0.1
6
S-72519-Rev. B, 03-Dec-07
Document Number: 70336
1
8
I
D
= 12 A
10
10