si7374dp Vishay, si7374dp Datasheet

no-image

si7374dp

Manufacturer Part Number
si7374dp
Description
N-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7374dp-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
si7374dp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a.
b.
c.
d.
e.
f.
Document Number: 73560
S–52604—Rev. A, 02–Jan–06
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Drain Diode Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
V
Based on T
Surface mounted on 1” x 1” FR4 board.
t = 10 sec.
See Solder Profile (http://www.vishay.com/doc?73461). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure
adequate bottom side solder interconnection.
Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Maximum under steady state conditions is 68 _C/W.
DS
DS
30
30
30
(V)
(V)
Ordering Information: Si7374DP-T1–E3 (Lead (Pb)–free)
C
N-Channel 30–V (D–S) MOSFET with Schottky Diode
= 25 _C.
Diode Forward Voltage
0.0066 at V
8
0.0055 at V
6.15 mm
D
r
7
DS(on)
D
0.39 V at 1.0 A
J
6
V
= 150 _C)
b, d
D
GS
GS
SD
150 _C)
PowerPAK SO-8
Parameter
Parameter
Bottom View
(W)
5
= 4.5 V
= 10 V
D
(V)
1
S
2
S
I
D
3
24
24
(A)
S
5.15 mm
a
4
I
G
F
2.0
(A)
Steady State
Q
T
T
T
T
T
T
T
T
T
T
t p 10 sec
A
A
A
A
A
C
C
C
C
C
g
36 nC
36 nC
New Product
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
= 25 _C
= 70 _C
= 25 _C
= 25 _C
= 70 _C
(Typ)
_
Symbol
Symbol
T
R
R
J
V
V
I
P
P
, T
DM
thJC
I
I
I
I
thJA
DS
GS
D
S
D
stg
D TrenchFETr PowerMOSFET
D 100 % R
D DC/DC Conversion
– CPU core low side
– Secondary synchronous rectification
N-Channel MOSFET
Typical
g
1.7
Tested
20
G
–55 to 150
23.8
Limit
4.2
3.2
"20
19
5
100
24
24
24
30
56
36
b, c
b, c
b, c
b, c
a
a
b, c
a
D
S
Maximum
Vishay Siliconix
2.2
25
Schottky Diode
Si7374DP
www.vishay.com
Unit
Unit
_C/W
_C/W
_C
W
W
RoHS
V
V
A
1

Related parts for si7374dp

si7374dp Summary of contents

Page 1

... S 6. Bottom View Ordering Information: Si7374DP-T1–E3 (Lead (Pb)–free) Parameter Drain-Source Voltage Gate-Source Voltage = 150 _C) 150 _C) Continuous Drain Current (T Continuous Drain Current (T J Pulsed Drain Current Continuous Source-Drain Diode Current Continuous Source Drain Diode Current Maximum Power Dissipation ...

Page 2

... Si7374DP Vishay Siliconix _ Parameter Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance ...

Page 3

... Q – Total Gate Charge (nC) g Document Number: 73560 S–52604—Rev. A, 02–Jan–06 New Product _ 1.6 2.0 80 100 = 100 Si7374DP Vishay Siliconix Transfer Characteristics 125 – 1.5 2.0 2.5 3.0 V – Gate-to-Source Voltage (V) GS ...

Page 4

... Si7374DP Vishay Siliconix Source-Drain Diode Forward Voltage 100 = 150 0.0 0.2 0.4 0.6 0.8 V – Source-to-Drain Voltage (V) SD Threshold Voltage 100.000 10.000 1.000 0.100 DS 0.010 0.001 100 T – Temperature (_C) J www.vishay.com 4 New Product 1.0 1.2 125 150 ...

Page 5

... It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73560 S–52604—Rev. A, 02–Jan–06 New Product 125 150 25 Si7374DP Vishay Siliconix Power de–Rating 50 75 100 125 150 T – Case Temperature (_C) C www.vishay.com 5 ...

Page 6

... Si7374DP Vishay Siliconix Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 Single Pulse 0.01 0.0001 0.001 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

Related keywords