si7374dp Vishay, si7374dp Datasheet - Page 4

• Manufacturer Part Number: si7374dp
• Description: N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

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4
Si7374DP
Vishay Siliconix
100.000
10.000
1.000
0.100
0.010
0.001
100
10
1
0.0
0
0.2
Source-Drain Diode Forward Voltage
25
V
SD
T
J
– Source-to-Drain Voltage (V)
= 150 _C
0.4
V
50
Threshold Voltage
T
DS
J
– Temperature (_C)
= 30 V
0.6
75
V
DS
= 24 V
0.8
100
*Limited by r
T
J
= 25 _C
1.0
125
0.01
100
_
0.1
10
DS(on)
1
0.1
1.2
150
Safe Operating Area, Junction-to-Ambient
*V
GS
New Product
Single Pulse
T
u minimum V
A
V
= 25 _C
DS
– Drain-to-Source Voltage (V)
1
GS
BVDSS Limited
at which r
0.022
0.018
0.014
0.010
0.006
0.002
10
DS(on)
50
40
30
20
10
0
0.01
2
is specified
On-Resistance vs. Gate-to-Source Voltage
25 _C
1 ms
10 ms
100 ms
dc
1 s
10 s
0.1
V
4
GS
100
Single Pulse Power
– Gate-to-Source Voltage (V)
Time (sec)
1
125 _C
6
S–52604—Rev. A, 02–Jan–06
Document Number: 73560
10
I
D
8
= 23.8 A
100
1000
10