bsc010ne2lsi Infineon Technologies Corporation, bsc010ne2lsi Datasheet - Page 3

• Manufacturer Part Number: bsc010ne2lsi
• Description: N-channel Power Mosfet
• Manufacturer: Infineon Technologies Corporation

2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
3) See figure 13 for more detailed information
3
Table 3
Parameter
Thermal resistance, junction - case
Device on PCB
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
Final Data Sheet
T
PCB is vertical in still air.
PCB is vertical in still air
j
See figure 3 for more detailed information
= 25 °C, unless otherwise specified.
Maximum ratings
Maximum ratings
Thermal characteristics
Thermal characteristics
2)
3)
Symbol
R
R
Symbol
I
I
I
E
V
P
T
D
D,pulse
AS
thJC
thJA
j
AS
GS
tot
,T
stg
Min.
-
-
-
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
55
2
Typ.
-
-
-
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
150
2
2
Values
(one layer, 70 µm thick) copper area for drain connection.
Values
(one layer, 70 µm thick) copper area for drain connection.
100
100
100
100
38
400
50
100
20
96
2.5
150
56
Max.
1.3
20
50
OptiMOS™ Power-MOSFET
Unit
A
mJ
V
W
°C
Ncm
Unit
K/W
Note / Test Condition
V
V
V
V
V
R
T
I
T
T
D
C
C
A
GS
GS
GS
GS
GS
thJA
=50 A,R
=25 °C
=25 °C
=25 °C, R
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V, T
=10 V, T
Note /
Test Condition
top
=50 K/W
6 cm
BSC010NE2LSI
GS
2
2.1, 2011-09-08
cooling area
=25 Ω
thJA
C
C
A
C
C
=25 °C
=100 °C
=25 °C,
1)
=25 °C
=100 °C
)
=50 K/W
1)
1)
)