bsc010ne2lsi Infineon Technologies Corporation, bsc010ne2lsi Datasheet - Page 3
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bsc010ne2lsi
Manufacturer Part Number
bsc010ne2lsi
Description
N-channel Power Mosfet
Manufacturer
Infineon Technologies Corporation
Datasheet
1.BSC010NE2LSI.pdf
(12 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BSC010NE2LSI
Manufacturer:
INFINEON
Quantity:
12 000
Part Number:
BSC010NE2LSI
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
2
at
Table 2
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2)
3) See figure 13 for more detailed information
3
Table 3
Parameter
Thermal resistance, junction - case
Device on PCB
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
Final Data Sheet
T
PCB is vertical in still air.
PCB is vertical in still air
j
See figure 3 for more detailed information
= 25 °C, unless otherwise specified.
Maximum ratings
Maximum ratings
Thermal characteristics
Thermal characteristics
2)
3)
Symbol
R
R
Symbol
I
I
I
E
V
P
T
D
D,pulse
AS
thJC
thJA
j
AS
GS
tot
,T
stg
Min.
-
-
-
Min.
-
-
-
-
-
-
-
-
-20
-
-
-55
55
2
Typ.
-
-
-
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
150
2
2
Values
(one layer, 70 µm thick) copper area for drain connection.
Values
(one layer, 70 µm thick) copper area for drain connection.
100
100
100
100
38
400
50
100
20
96
2.5
150
56
Max.
1.3
20
50
OptiMOS™ Power-MOSFET
Unit
A
mJ
V
W
°C
Ncm
Unit
K/W
Note / Test Condition
V
V
V
V
V
R
T
I
T
T
D
C
C
A
GS
GS
GS
GS
GS
thJA
=50 A,R
=25 °C
=25 °C
=25 °C, R
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V, T
=10 V, T
Note /
Test Condition
top
=50 K/W
6 cm
BSC010NE2LSI
GS
2
2.1, 2011-09-08
cooling area
=25 Ω
thJA
C
C
A
C
C
=25 °C
=100 °C
=25 °C,
1)
=25 °C
=100 °C
)
=50 K/W
1)
1)
)