bsc010ne2lsi Infineon Technologies Corporation, bsc010ne2lsi Datasheet - Page 5

• Manufacturer Part Number: bsc010ne2lsi
• Description: N-channel Power Mosfet
• Manufacturer: Infineon Technologies Corporation

Table 6
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Gate charge total, sync. FET
Output charge
1) See figure 16 for gate charge parameter definition
Table 7
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery charge
Final Data Sheet
Gate charge characteristics
Reverse diode characteristics
Symbol
Q
Q
Q
Q
Q
V
Q
Q
Q
Symbol
I
I
V
Q
s
S,pulse
plateau
SD
g(th)
sw
g(sync)
oss
gs
gd
g
g
rr
1)
Min.
-
-
-
-
-
-
-
-
-
Min.
-
-
-
-
4
Typ.
10
6.7
6.9
10
29
2.4
59
25
38
Typ.
-
-
0.56
5
Values
Values
Max.
-
-
-
-
-
-
-
-
-
Max.
96
400
0.7
-
OptiMOS™ Power-MOSFET
Unit
nC
V
nC
Unit
A
V
nC
Electrical characteristics
Note /
Test Condition
V
I
V
V
I
V
V
V
V
Note /
Test Condition
T
V
T
V
d
D
D
i
C
j
DD
GS
DD
GS
DS
GS
DD
GS
R
=30 A,
=30 A,
F
=25 °C
BSC010NE2LSI
=25 °C
=15 V,
/d
=0.1 V,
=12 V,
=0 to 4.5 V
=12 V,
=0 to 10V
=0 to 4.5 V
=12 V,
=0 V,
t
=400 A/µs
2.1, 2011-09-08
I
I
F
F
V
=12 A,
=I
GS
s
,
=0 V