tp2510 Supertex, Inc., tp2510 Datasheet

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tp2510

Manufacturer Part Number
tp2510
Description
P-channel Enhancement Mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet

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Quantity
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Part Number:
TP2510
Manufacturer:
SUPERTEX
Quantity:
20 000
Part Number:
tp2510N8
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SUPERTEX
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20 000
Part Number:
tp2510N8-G
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Part Number:
tp2510N8-G
0
Features
Applications
-G indicates package is RoHS compliant (‘Green’)
* MIL visual screening available.
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device may
occur. Functional operation under these conditions is not implied. Continuous operation
of the device at the absolute rating level may affect device reliability. All voltages are
referenced to device ground.
* Distance of 1.6 mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
TP2510
Device
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
TO-243AA (SOT-89)
TP2510N8-G
Package Options
P-Channel Enhancement Mode
Vertical DMOS FETs
TP2510ND
-55°C to +150°C
Die*
300°C
Value
BV
BV
±20V
DGS
DSS
BV
General Description
This low threshold enhancement-mode (normally-off) tran-
sistor utilizes a vertical DMOS structure and Supertex’s well-
proven silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities of
bipolar transistors and with the high input impedance and
positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching
speeds are desired.
DSS
Pin Confi guration
Product Marking
-100
(V)
/BV
DGS
TP5AW
TO-243AA (SOT-89) (N8)
TO-243AA (SOT-89) (N8)
R
3.5
DS(ON)
(Ω)
DRAIN
W = Code for Week Sealed
GATE
= “Green” Packaging
DRAIN
V
(max)
-2.4
GS(TH)
(V)
SOURCE
TP2510
I
(min)
-1.5
D(ON)
(A)

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tp2510 Summary of contents

Page 1

... BV /BV DSS DGS (V) Die* TP2510ND -100 Pin Confi guration Value BV DSS BV DGS ±20V -55°C to +150°C Product Marking 300°C TP2510 V R GS(TH) DS(ON) (max) (Ω) (V) 3.5 -2.4 DRAIN SOURCE DRAIN GATE TO-243AA (SOT-89) (N8 Code for Week Sealed TP5AW = “Green” Packaging TO-243AA (SOT-89) (N8) ...

Page 2

... -10V -750mA mmho V = -25V -750mA DS D 125 -25V 1.0 MHz -25V -1.0A 25Ω GEN -1. 0V -1. PULSE R GEN INPUT TP2510 I DRM (A) -2 -25V = -25V D.U.T. Output ...

Page 3

... Saturation Characteristics - -10V GS -2 -8V -6V -1 -4V - (volts) DS Power Dissipation vs. Ambient Temperature 2.0 TO-243AA 1 100 125 T (°C) A Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-243AA T = 25° 0.001 0.01 0 (seconds) p TP2510 -10 150 10 ...

Page 4

... On-Resistance vs. Drain Current - -10V -0.8 -1.6 -2.4 -3.2 I (amperes and R Variation with Temperature (th -10V, -0.75A DS (ON) 1.2 1.0 0 -1mA (th) 0.6 0.4 - 100 T (°C) j Gate Drive Dynamic Characteristics 142 -10V -40V 1 (nanocoulombs) G TP2510 -4.0 2.0 1.6 1.2 0.8 0.4 0 150 2.0 ...

Page 5

... MAX 1.60 0.56 JEDEC Registration TO-243, Variation AA, Issue C, July 1986. Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TP2510 B122707 ...

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