lp0701 Supertex, Inc., lp0701 Datasheet

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lp0701

Manufacturer Part Number
lp0701
Description
P-channel Enhancement-mode Lateral Mosfet
Manufacturer
Supertex, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
lp0701LG
Manufacturer:
SUPERTEX
Quantity:
20 000
Part Number:
lp0701LG-G
Manufacturer:
MICROCHIP/微芯
Quantity:
20 000
Ordering Information
Features
Applications
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
01/06/03
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.
Distance of 1.6 mm from case for 10 seconds.
Ultra low threshold
High input impedance
Low input capacitance
Fast switching speeds
Low on resistance
Freedom from secondary breakdown
Low input and output leakage
Complementary N- and P-channel devices
Logic level interfaces
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
BV
-16.5V
BV
DSS
DGS
/
R
(max)
1.5Ω
DS(ON)
-1.25A
(min)
I
D(ON)
P-Channel Enhancement-Mode
-55°C to +150°C
V
(max)
-1.0V
300°C
BV
GS(th)
BV
± 10V
DGS
DSS
Lateral MOSFET
1
LP0701N3
Advanced MOS Technology
These enhancement-mode (normally-off) transistors utilize a lat-
eral MOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and negative temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown. The low threshold voltage and low on-
resistance characteristics are ideally suited for hand held battery
operated applications.
Package Options
TO-92
Note: See Package Outline section for dimensions.
Order Number / Package
NC
NC
G
LP0701LG
S
SO-8
1
2
3
4
top view
SO-8
TO-92
S G D
Low Threshold
LP0701ND
Die
8
7
6
5
LP0701
D
D
D
D
(Note 1)

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lp0701 Summary of contents

Page 1

... Package Options BV DSS BV DGS ± 10V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 1 LP0701 Low Threshold Order Number / Package SO-8 Die LP0701LG LP0701ND TO- SO-8 top view (Note 1) ...

Page 2

... D 2 -3V -150mA -5V -300mA GS D %/° -5V -300mA -15V - 0V -15V 1MHz =-15V -1.25A 25Ω GEN 0V -500mA GS SD PULSE R gen INPUT V DD LP0701 I * DRM -1.25A -1.25A D.U.T. OUTPUT R L ...

Page 3

... T = -55° 25° 125°C A -2.0 -10 -100 3 Saturation Characteristics V = -5V GS -4V -3V -2V - (volts) DS Power Dissipation vs. Case Temperature 2 SO-8 TO- 100 125 T (°C) C Thermal Response Characteristics 1.0 0.8 0.6 TO- 25° 0.2 0 0.001 0.01 0.1 1.0 t (seconds) P LP0701 -5 150 10 ...

Page 4

... Variation with Temperature (th) DS 1.4 1 -1mA (th) 1.0 0 -5V, -300mA DS(ON) 0.6 0.4 - 100 T (°C) j Gate Drive Dynamic Characteristics - -10V DS -8 -20V -6 238pF - 115pF ISS (nanocoulombs) G 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 LP0701 -3 1.6 1.4 1.2 1.0 0.8 0.6 150 5 01/06/03 www.supertex.com ...

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