si7456cdp Vishay, si7456cdp Datasheet

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si7456cdp

Manufacturer Part Number
si7456cdp
Description
N-channel 100 V D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7456cdp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Notes:
a. Based on T
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
Document Number: 65941
S10-0785-Rev. A, 05-Apr-10
Ordering Information: Si7456CDP-T1-GE3 (Lead (Pb)-free and Halogen-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
V
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
100
(V)
8
6.15 mm
D
7
C
D
= 25 °C.
0.0245 at V
0.0315 at V
0.0235 at V
6
D
PowerPAK
R
5
Bottom View
DS(on)
D
GS
GS
GS
(Ω)
J
1
®
= 7.5 V
= 4.5 V
= 10 V
= 150 °C)
b, f
S
SO-8
2
S
N-Channel 100 V (D-S) MOSFET
3
S
5.15 mm
4
I
G
D
27.5
27
24
(A)
a
d, e
A
= 25 °C, unless otherwise noted
Q
Steady State
7.7 nC
g
L = 0.1 mH
T
T
T
T
T
T
T
T
T
T
(Typ.)
C
C
A
A
C
A
C
C
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• 100 % R
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
• DC/DC Primary Side Switch
• Telecom/Server 48 V, Full/Half-Bridge dc-to-dc
• Industrial
Symbol
Symbol
T
R
R
Definition
J
V
V
E
I
I
P
, T
DM
I
I
AS
thJA
thJC
DS
GS
D
S
AS
D
stg
g
Tested
®
Power MOSFET
Typical
2.9
20
- 55 to 150
10.3
8.2
4.5
5.0
3.2
Limit
± 20
27.5
11.2
35.7
22.8
100
260
22
50
25
15
b, c
b, c
b, c
b, c
b, c
Maximum
3.5
25
Vishay Siliconix
Si7456CDP
G
N-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
D
S
mJ
°C
W
V
A
1

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si7456cdp Summary of contents

Page 1

... Bottom View Ordering Information: Si7456CDP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy ...

Page 2

... Si7456CDP Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...

Page 3

... 520 260 2.0 1.7 1 1.1 0.8 0.5 12.8 16 Si7456CDP Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics C iss C oss C rss Drain-to-Source Voltage (V) ...

Page 4

... Si7456CDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0 0 250 μ 0 Temperature (°C) J Threshold Voltage 100 10 0.1 0.01 www.vishay.com 4 0.10 0.08 0. °C J 0.04 0.02 0.00 0.8 1.0 1.2 0 200 160 ...

Page 5

... T - Case Temperature (°C) C Current Derating* 2.5 2.0 1.5 1.0 0.5 0.0 100 125 150 0 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper Si7456CDP Vishay Siliconix 150 100 125 150 T - Ambient Temperature (°C) A Power, Junction-to-Ambient www.vishay.com 5 ...

Page 6

... Si7456CDP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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