si7456cdp Vishay, si7456cdp Datasheet - Page 3

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si7456cdp

Manufacturer Part Number
si7456cdp
Description
N-channel 100 V D-s Mosfet
Manufacturer
Vishay
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
si7456cdp-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 65941
S10-0785-Rev. A, 05-Apr-10
0.060
0.048
0.036
0.024
0.012
0.000
10
50
40
30
20
10
8
6
4
2
0
0
On-Resistance vs. Drain Current and Gate Voltage
0.0
0
0
I
V
D
GS
= 10 A
3.2
10
1
= 4.5 V
V
V
DS
DS
Q
Output Characteristics
g
= 50 V
- Drain-to-Source Voltage (V)
V
- Total Gate Charge (nC)
I
GS
D
V
- Drain Current (A)
DS
Gate Charge
6.4
20
= 10 V thru 5 V
2
= 25 V
V
GS
9.6
30
= 4 V
3
V
DS
V
V
V
GS
GS
GS
= 75 V
12.8
40
4
= 7.5 V
= 10 V
= 3 V
16.0
50
5
1300
1040
780
520
260
2.0
1.7
1.4
1.1
0.8
0.5
10
8
6
4
2
0
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
- 25
I
D
rss
= 10 A
20
1
V
V
DS
GS
Transfer Characteristics
T
0
J
T
C
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
C
- Junction Temperature (°C)
iss
= 125 °C
T
25
C
Capacitance
40
2
= 25 °C
50
V
Vishay Siliconix
GS
60
3
75
Si7456CDP
= 10 V
T
C
C
100
oss
= - 55 °C
V
GS
www.vishay.com
80
4
= 4.5 V
125
100
150
5
3

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