si7904bdn Vishay, si7904bdn Datasheet - Page 4

• Manufacturer Part Number: si7904bdn
• Description: Dual N-channel 20-v D-s Mosfet
• Manufacturer: Vishay

Si7904BDN
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
100
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1
- 50
0
Source-Drain Diode Forward Voltage
- 25
0.2
V
SD
0
Threshold Voltage
- Source-to-Drain Voltage (V)
T
I
0.4
D
J
- Temperature (°C)
= 250 µA
25
T
J
= 150 °C
0.6
50
75
0.8
T
0.01
J
100
0.1
= 25 °C
10
100
1
0.1
*Limited by r
Safe Operating Area, Junction-to-Ambient
*V
1
125
GS
Single Pulse
T
A
V
= 25 °C
minimum V
DS
1.2
150
DS(on)
- Drain-to-Source Voltage (V)
1
GS
at which r
BV
DSS
Limited
DS(on)
0.060
0.050
0.040
0.030
0.020
10
50
40
30
20
10
0.001
0
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
10 ms
100 ms
1 s
10 s
100 µs
1 ms
dc
0.01
I
D
= 7.1 A
25 °C
V
1
100
GS
- Gate-to-Source Voltage (V)
0.1
Time (sec)
2
I
D
125 °C
S-62481-Rev. A, 04-Dec-06
= 7.1 A
1
Document Number: 74409
3
10
4
100
600
5