si7956dp Vishay, si7956dp Datasheet - Page 3

• Manufacturer Part Number: si7956dp
• Description: Dual N-channel 150-v D-s Mosfet
• Manufacturer: Vishay

Document Number: 72960
S-41071—Rev. A, 31-May-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.20
0.16
0.12
0.08
0.04
0.00
0.1
10
20
10
8
6
4
2
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 4.1 A
0.2
On-Resistance vs. Drain Current
= 75 V
4
4
V
SD
T
Q
J
g
= 150_C
− Source-to-Drain Voltage (V)
V
I
0.4
D
− Total Gate Charge (nC)
GS
− Drain Current (A)
Gate Charge
= 6 V
8
8
0.6
12
12
0.8
V
GS
T
J
= 10 V
16
16
= 25_C
1.0
1.2
20
20
New Product
1500
1200
0.20
0.16
0.12
0.08
0.04
0.00
900
600
300
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
−50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
−25
D
10
GS
= 4.1 A
= 10 V
C
2
oss
T
V
V
20
0
J
DS
GS
− Junction Temperature (_C)
− Gate-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
30
25
Capacitance
4
C
iss
Vishay Siliconix
40
50
C
rss
I
D
= 4.1 A
6
50
75
Si7956DP
100
60
www.vishay.com
8
125
70
150
10
80
3