tp2635 Supertex, Inc., tp2635 Datasheet

tp2635

Manufacturer Part Number

tp2635

Description

P-channel Enhancement-mode Vertical Dmos Fet

Manufacturer

Supertex, Inc.

Datasheet

1.TP2635.pdf (5 pages)

Current page: 1 of 5
Download datasheet (594Kb)

Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Low threshold (-2.0V max.)

High input impedance

Low input capacitance

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

TP2635

Device

Package Option

TP2635N3-G

TO-92

P-Channel Enhancement-Mode

Vertical DMOS FET

-55°C to +150°C

DSS

(max)

-350

(V)

+300°C

/BV

Value

±20V

DGS

DSS

General Description

This low threshold enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁ cient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁ guration

Product Marking

(max)

DS(ON)

(Ω)

Y Y W W

2635

DRAIN

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

(max)

-2.0

GS(th)

(V)

= “Green” Packaging

SOURCE

GATE

TP2635

(min)

-0.7

D(ON)

(A)

Related parts for tp2635

tp2635 Summary of contents

Page 1

... R DSS DGS (max) (V) -350 Pin Conﬁ guration Value BV DSS BV DGS ±20V Product Marking -55°C to +150°C +300° DS(ON) GS(th) (max) (max) (Ω) (V) 15 -2.0 SOURCE DRAIN GATE TO-92 (N3 Year Sealed 2635 WW = Week Sealed = “Green” Packaging TO-92 (N3) TP2635 I D(ON) (min) (A) -0.7 ...

Page 2

... 1.0MHz -25V -300MA 25Ω GEN GEN D.U.T. Output INPUT TP2635 I DRM (A) -0.8 = -2.0mA D = -1.0mA D = -1.0mA -100V DS = Max rating DS = 125 -25V DS = -20mA D = -150mA D = -300mA D = -300mA D = -300mA D = -200mA SD = -200mA ...

Page 3

... -55°C A 25°C -1.2 -1.6 -2.0 -100 -1000 3 Saturation Characteristics -1.0 -6V -0 -10V GS -4V -0.6 -0.4 -3V -0 (volts) DS Power Dissipation vs. Temperature 2.0 1.6 1.2 TO-92 0.8 0 100 125 ° Thermal Response Characteristics 1.0 0.8 0.6 0.4 TO-92 0 25° 1.0W 0 0.001 0.01 0.1 1.0 t (seconds) p TP2635 -8V -10 150 10 ...

Page 4

... ISS - RSS 0 -30 - On-Resistance vs. Drain Current V = -2. -4. -10V GS -0.4 -0.8 -1.2 -1.6 -2.0 I (amperes) D and R Variation with Temperature -1mA (th -10V, -0.3A DS(ON 100 150 ° Gate Drive Dynamic Characteristics 678pF V = -10V -40V DS 263pF (nanocoulombs) G TP2635 2.5 2.0 1.5 1.0 0.5 0 ...

Page 5

... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing(s) in this data sheet may not reﬂ ect the most current speciﬁ cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-TP2635 A102607 Side View ...

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