2sd1804l-x-tn3-t Unisonic Technologies, 2sd1804l-x-tn3-t Datasheet - Page 2

• Manufacturer Part Number: 2sd1804l-x-tn3-t
• Description: Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

2SD1804
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Storage Time
Fall Time
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Dissipation
Collector Current
Collector Current(PULSE)
Junction Temperature
Storage Temperature
ABSOLUTE MAXIMUM RATING
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
PARAMETER
70-140
Q
FE1
SYMBOL
V
V
BV
BV
BV
CE(SAT)
BE(SAT)
h
h
I
I
t
C
CBO
EBO
STG
FE1
FE2
f
t
CBO
CEO
EBO
T
F
ob
(Ta=25 ℃ , unless otherwise specified)
(Ta=25 ℃ , unless otherwise specified)
I
I
I
V
V
V
V
V
V
I
I
See test circuit
See test circuit
C
C
E
C
C
100-200
CB
EB
CE
CE
CE
CE
=10 µ A, I
=1mA, R
=10 µ A, I
=4A, I
=4A, I
=4V, I
=40V, I
=2V, I
=2V, I
=5V, I
=10V, f=1MHz
R
TEST CONDITIONS
B
B
=0.2A
=0.2A
C
C
C
C
C
E
BE
=0
SYMBOL
=0.5A
=6A
=1A
E
Tc=25 ℃
=0
=0
I
=0
C(PULSE)
= ∞
V
V
V
T
P
T
CBO
CEO
EBO
I
STG
C
D
J
NPN SILICON TRANSISTOR
140-280
S
RATINGS
-55~+150
+150
60
50
20
12
6
1
8
MIN
60
50
70
35
6
TYP
0.95
180
200
500
65
20
200-400
MAX UNIT
400
400
T
QW-R209-006,C
1.3
1
1
UNIT
℃
℃
W
W
2 of 5
V
V
V
A
A
MHz
mV
µ A
µ A
pF
ns
ns
V
V
V
V