2sd1823 Panasonic Corporation of North America, 2sd1823 Datasheet

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2sd1823

Manufacturer Part Number
2sd1823
Description
Silicon Npn Epitaxial Planer Type For Low-frequency Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2sd1823OSL
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Transistors
2SD1823
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• High emitter-base voltage (Collector open) V
• Low noise voltage NV
• S-Mini type package, allowing downsizing of the equipment
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
and automatic insertion through the tape packing and the maga-
zine packing.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
400 to 800
*
R
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
FE
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
I
600 to 1 200
stg
C
CE(sat)
C
h
CBO
j
CEO
f
CBO
CEO
EBO
= 25°C
FE
T
CE(sat)
S
−55 to +150
EBO
Rating
I
I
I
V
V
V
I
V
C
C
E
C
100
150
150
CB
CE
CE
CB
50
40
15
50
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 10 mA, I
SJC00229BED
= 20 V, I
= 10 V, I
= 20 V, I
= 10 V, I
1 000 to 2 000
B
T
C
E
Conditions
Unit
B
mW
B
C
E
E
mA
mA
= 0
°C
°C
= 0
= 0
V
V
V
= 1 mA
= 0
= 0
= 2 mA
= −2 mA, f = 200 MHz
Marking symbol: 1Z
10°
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
±0.1
±0.2
Min
400
50
40
15
2
0.05
Typ
120
SMini3-G1 Package
2 000
Max
0.20
0.1
1
0.15
EIAJ: SC-70
1: Base
2: Emitter
3: Collector
+0.10
–0.05
Unit: mm
MHz
Unit
µA
µA
V
V
V
V
1

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2sd1823 Summary of contents

Page 1

... Transistors 2SD1823 Silicon NPN epitaxial planar type For low-frequency amplification ■ Features • High forward current transfer ratio h • Low collector-emitter saturation voltage V • High emitter-base voltage (Collector open) V • Low noise voltage NV • S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- zine packing ...

Page 2

... 200 160 120 120 160 ( °C ) Ambient temperature T a  CE(sat) C 100 = 75° 25°C 0.1 −25°C 0.01 0 100 ( mA ) Collector current I C  MHz = 25° ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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