2sd1775a Panasonic Corporation of North America, 2sd1775a Datasheet

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2sd1775a

Manufacturer Part Number
2sd1775a
Description
Silicon Npn Triple Diffusion Planar Type For High-speed Switching And High Current Amplification Ratio
Manufacturer
Panasonic Corporation of North America
Datasheet
Power Transistors
2SD1775A
Silicon NPN triple diffusion planar type
For high-speed switching and high current amplification ratio
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: April 2003
• High forward current transfer ratio h
• Satisfactory linearity of forward current transfer ratio h
• N type package enabling direct soldering of the radiating fin to the
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Strage time
Fall time
printed circuit board, etc. of small electronic equipment.
2. * : Rank classification
Parameter
Rank
Parameter
h
FE
500 to 1 000
T
a
*
= 25°C
R
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
FE
T
V
V
I
P
I
I
T
V
CBO
CEO
EBO
C
CP
I
I
I
800 to 1500
C
B
stg
CE(sat)
BE(sat)
C
C
h
CBO
CEO
EBO
t
t
j
f
CEO
stg
t
on
FE
= 25°C
T
ob
f
Q
−55 to +150
Rating
I
V
V
V
V
I
I
V
V
I
I
V
C
C
C
C
B1
100
150
0.5
1.3
CB
CE
EB
CE
CE
CB
CC
80
25
= 25 mA, I
= 1 A, I
= 1 A, I
= 1 A
6
2
4
= 25 mA, I
SJD00231BED
= 40 V, I
= 6 V, I
= 4 V, I
= 12 V, I
= 100 V, I
= 10 V, I
= 50 V
FE
B
B
= 25 mA
= 25 mA
C
C
Conditions
Unit
B
B
C
E
= 0
= 300 mA
°C
°C
W
B2
V
V
V
A
A
A
E
= 0
= 0
= 200 mA, f = 10 MHz
= 0, f = 1 MHz
= 0
= −25 mA
Note) Self-supported type package is also prepared.
1
8.5
6.0
2
±0.2
±0.2
Min
500
80
3
2.54
1.4
5.08
0.8
±0.1
±0.5
±0.3
±0.1
Typ
0.6
2.5
1.0
40
30
0 to 0.4
R = 0.5
R = 0.5
1.0
±0.1
1500
Max
(8.5)
(6.0)
(6.5)
100
100
100
1.0
1.2
3.4
1.0
N-G1 Package
0.4
±0.3
±0.1
±0.1
1: Base
2: Collector
3: Emitter
1.3
Unit: mm
MHz
Unit
µA
µA
µA
pF
µs
µs
µs
V
V
V
1

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