2sd1752a Panasonic Corporation of North America, 2sd1752a Datasheet
2sd1752a
Manufacturer Part Number
2sd1752a
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1752A.pdf
(4 pages)
Power Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching
Complementary to 2SB1148 and 2SB1148A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2003
• Low collector-emitter saturation voltage V
• High-speed switching
• Satisfactory liniarity of forward current transfer ratio h
• Large collector current I
• I type package enabling direct soldering of the radiating fin to the
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD1752
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward current transfer ratio
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
printed circuit board, etc. of small electronic equipment
2. * : Rank classification
Parameter
Parameter
2SD1752
2SD1752A
2SD1752A
T
C
a
2SD1752
2SD1752A
2SD1752
2SD1752A
= 25°C
Rank
h
FE2
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
h
I
T
V
CBO
CEO
EBO
C
CP
I
I
h
C
stg
CE(sat)
BE(sat)
C
C
FE2
CBO
EBO
t
t
j
f
CEO
FE1
stg
t
on
= 25°C
T
ob
f
*
CE(sat)
−55 to +150
90 to 180
Rating
I
V
V
V
V
V
I
I
V
V
I
V
C
C
C
C
150
1.3
CB
CB
EB
CE
CE
CE
CB
CC
Q
40
50
20
40
10
20
15
= 10 mA, I
= 10 A, I
= 10 A, I
= 3 A, I
5
SJD00224BED
= 5 V, I
= 2 V, I
= 2 V, I
= 10 V, I
= 40 V, I
= 50 V, I
= 10 V, I
= 20 V
FE
B1
B
B
C
C
C
= 0.1 A, I
Conditions
= 0.33 A
= 0.33 A
Unit
B
E
E
C
E
= 0
= 0.1 A
= 3 A
°C
°C
130 to 260
W
V
V
V
A
A
= 0
= 0
= 0
= 0.5 A, f = 10 MHz
= 0, f = 1 MHz
P
B2
= − 0.1 A
Note) Self-supported type package is also prepared.
1
7.0
4.6
Min
20
40
45
90
2
±0.3
±0.4
3
2.3
1.1
0.75
3.0
2.0
Typ
±0.2
120
200
0.3
0.4
0.1
±0.1
±0.2
±0.2
±0.1
0.4
Max
260
±0.1
3.5
0.6
1.5
50
50
50
±0.2
I-G1 Package
1: Base
2: Collector
3: Emitter
Unit : mm
0˚ to 0.15˚
0.9
0˚ to 0.15˚
MHz
Unit
±0.1
µA
µA
pF
µs
µs
µs
V
V
V
1
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2sd1752a Summary of contents
Page 1
... Power Transistors 2SD1752, 2SD1752A Silicon NPN epitaxial planar type For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A ■ Features • Low collector-emitter saturation voltage V • High-speed switching • Satisfactory liniarity of forward current transfer ratio h • Large collector current I C • I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment ■ ...
Page 2
... (1)T =Ta C (2)Without heat sink (P =1.3W 120 160 Ambient temperature T (°C) a BE(sat = 25˚C 1 –25˚C T =100˚C C 0.1 0.01 0 Collector current I (A) C stg f C 100 ...
Page 3
... −1 10 −4 −3 −2 − Time t (s) t (1)Without heat sink (2)With a 50×50×2mm Al heat sink (1) ( SJD00224BED 2SD1752, 2SD1752A 3 ...
Page 4
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...