2sd1750 Panasonic Corporation of North America, 2sd1750 Datasheet
2sd1750
Manufacturer Part Number
2sd1750
Description
Silicon Npn Triple Diffusion Planar Type Darlington
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1750.pdf
(3 pages)
Power Transistors
2SD1750, 2SD1750A
Silicon NPN triple diffusion planar type darlington
For midium speed power switching
Complementary to 2SB1180 and 2SB1180A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2004
• High forward current transfer ratio h
• High-speed switching
• I type package enabling direct soldering of the radiating fin to the
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD1750
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Collector-base cutoff
current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Forward current transfer ratio
Turn-on time
Storage time
Fall time
printed circuit board, etc. of small electronic equipment
2. * : Rank classification
Parameter
Rank
Parameter
h
FE1
2 000 to 5 000 4 000 to 10 000
2SD1750
2SD1750A
2SD1750A
T
a
2SD1750
2SD1750A
2SD1750
2SD1750A
= 25°C
Q
FE
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
h
I
T
V
CBO
CEO
EBO
C
CP
I
I
stg
h
C
CE(sat)
BE(sat)
C
FE1
CBO
t
j
EBO
t
f
CEO
FE2
stg
t
on
= 25°C
T
f
*
P
−55 to +150
Rating
I
V
V
V
V
V
I
I
V
I
V
C
C
C
C
150
CB
CB
EB
CE
CE
CE
CC
1.3
60
80
60
80
12
15
= 30 mA, I
= 4 A, I
= 4 A, I
= 4 A, I
7
8
SJD00222CED
= 7 V, I
= 3 V, I
= 3 V, I
= 10 V, I
= 60 V, I
= 80 V, I
= −50 V
B
B
B1
= 8 mA
= 8 mA
C
C
C
= 8 mA, I
Conditions
Unit
B
C
E
E
= 0
= 4 A
= 8 A
°C
°C
W
V
V
V
A
A
= 0
= 0
= 0
= 0.5 A, f = 1 MHz
B2
= −8 mA
Note) Self-supported type package is also prepared.
Internal Connection
1
B
2 000
7.0
4.6
Min
500
60
80
2
±0.3
±0.4
3
2.3
1.1
0.75
3.0
2.0
±0.2
Typ
0.5
4.0
1.0
20
±0.1
±0.2
±0.2
±0.1
0.4
10 000
Max
C
E
±0.1
100
100
3.5
1.5
2.0
2
±0.2
I-G1 Package
1: Base
2: Collector
3: Emitter
Unit : mm
0˚ to 0.15˚
0.9
0˚ to 0.15˚
MHz
Unit
±0.1
mA
µA
µs
µs
µs
V
V
V
1
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2sd1750 Summary of contents
Page 1
... I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment ■ Absolute Maximum Ratings T Parameter 2SD1750 Collector-base voltage (Emitter open) 2SD1750A Collector-emitter voltage 2SD1750 (Base open) 2SD1750A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation = 25°C ...
Page 2
... (1)T =Ta C (2)Without heat sink (P =1.3W 120 160 Ambient temperature T (°C) a CE(sat =500 =100˚C C 25˚C –25˚C 1 0.1 0.01 0 Collector current I (A) C Safe operation area 100 Non repetitive pulse T =25˚ ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...