2sd1742a Panasonic Corporation of North America, 2sd1742a Datasheet

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2sd1742a

Manufacturer Part Number
2sd1742a
Description
Silicon Pnp Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1742, 2SD742A
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• High forward current transfer ratio h
• Low collector-emitter saturation voltage V
• I type package enabling direct soldering of the radiating fin to the
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SB1172
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Base-emitter voltage
Collector-emitter cutoff
current (E-B short)
Collector-emitter cutoff
current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
printed circuit board, etc. of small electronic equipment
2. * : Rank classification
Parameter
Parameter
2SB1172
2SB1172A
2SB1172A
T
a
2SB1172
2SB1172A
2SB1172
2SB1172A
2SB1172
2SB1172A
= 25°C
Rank
h
FE
FE2
C
Symbol
which has satisfactory linearity
V
V
V
= 25°C ± 3°C
Symbol
T
V
I
P
h
I
T
V
CBO
CEO
EBO
C
CP
I
I
stg
V
I
h
C
CE(sat)
C
FE1
t
j
CEO
EBO
t
CES
f
CEO
FE2
stg
t
on
= 25°C
BE
T
f
*
CE(sat)
−55 to +150
70 to 150
Rating
I
V
V
V
V
V
V
V
V
I
V
I
V
C
C
C
−60
−80
−60
−80
150
CE
CE
CE
CE
CE
EB
CE
CE
CE
CC
1.3
−5
−3
−5
Q
15
= −30 mA, I
= −3 A, I
= −1 A, I
SJD00048AED
= −4 V, I
= −60 V, V
= −80 V, V
= −30 V, I
= −60 V, I
= −5 V, I
= −4 V, I
= −4 V, I
= −10 V, I
= −50 V
B
B1
Conditions
Unit
= − 0.375 A
C
C
C
C
120 to 250
°C
°C
= − 0.1 A, I
W
V
V
V
A
A
B
B
B
C
= −3 A
= 0
= −1 A
= −3 A
BE
BE
= 0
= 0
= 0
= − 0.5 A, f = 10 MHz
= 0
= 0
P
B2
= 0.1 A
Note) Self-supported type package is also prepared.
1
7.0
4.6
Min
−60
−80
70
10
2
±0.3
±0.4
3
2.3
1.1
0.75
3.0
2.0
±0.2
Typ
0.5
1.2
0.3
30
±0.1
±0.2
±0.2
±0.1
0.4
−200
−200
−300
−300
Max
−1.8
−1.2
±0.1
250
3.5
−1
±0.2
I-G1 Package
1: Base
2: Collector
3: Emitter
Unit: mm
0˚ to 0.15˚
0.9
0˚ to 0.15˚
MHz
Unit
±0.1
mA
µA
µA
µs
µs
µs
V
V
V
1

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2sd1742a Summary of contents

Page 1

Power Transistors 2SB1172, 2SB1172A Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SD1742, 2SD742A ■ Features • High forward current transfer ratio h • Low collector-emitter saturation voltage V • I type package enabling direct soldering of ...

Page 2

(1)T =Ta C (2)Without heat sink (P =1.3W ( 120 160 ( °C ) Ambient temperature T a  CE(sat) C ...

Page 3

This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...

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