2sd1705 Panasonic Corporation of North America, 2sd1705 Datasheet

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2sd1705

Manufacturer Part Number
2sd1705
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Power Transistors
2SD1705
Silicon NPN epitaxial planar type
For power switching
Complementary to 2SB1154
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2003
• Low collector-emitter saturation voltage V
• Satisfactory linearity of forward current transfer ratio h
• Large collector current I
• Full-pack package which can be installed to the heat sink with one
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
screw
2. * : Rank classification
Parameter
Rank
Parameter
h
FE2
T
C
90 to 180
a
= 25°C
Q
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
V
V
V
V
T
I
P
h
CBO
I
T
V
CEO
EBO
C
CP
I
I
CE(sat)1
CE(sat)2
BE(sat)1
BE(sat)2
stg
h
h
C
C
FE2
CBO
t
130 to 260
j
EBO
t
f
CEO
FE1
FE3
stg
t
on
= 25°C
T
f
*
CE(sat)
P
−55 to +150
Rating
I
V
V
V
V
V
I
I
I
I
V
I
V
C
C
C
C
C
C
130
150
CB
EB
CE
CE
CE
CE
CC
3.0
80
10
20
70
= 10 mA, I
= 6 A, I
= 10 A, I
= 6 A, I
= 10 A, I
= 6 A, I
7
SJD00210BED
= 5 V, I
= 2 V, I
= 2 V, I
= 2 V, I
= 10 V, I
= 100 V, I
= 50 V
FE
B
B
B1
B
B
= 0.3 A
= 0.3 A
C
C
C
C
= 0.6 A, I
Conditions
Unit
B
= 1 A
= 1 A
C
= 3 A
= 6 A
= 0
= 0.1 A
°C
°C
W
V
V
V
A
A
E
= 0
= 0.5 A, f = 1 MHz
= 0
B2
= − 0.6 A
1
15.0
11.0
10.9
Min
80
45
90
30
2
±0.3
±0.2
±0.5
3
5.45
1.1
Typ
2.0
0.5
2.0
0.2
20
φ 3.2
±0.3
±0.1
±0.2
±0.1
TOP-3F-A1 Package
Max
260
0.5
1.5
1.5
2.5
10
50
5.0
EIAJ: SC-92
1: Base
2: Collector
3: Emitter
±0.2
Unit: mm
0.6
(3.2)
MHz
Unit
2.0
µA
µA
±0.2
µs
µs
µs
V
V
V
±0.1
1

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2sd1705 Summary of contents

Page 1

... Power Transistors 2SD1705 Silicon NPN epitaxial planar type For power switching Complementary to 2SB1154 ■ Features • Low collector-emitter saturation voltage V • Satisfactory linearity of forward current transfer ratio h • Large collector current I C • Full-pack package which can be installed to the heat sink with one screw ■ ...

Page 2

... 120 (1)T =Ta C (2)With a 100×100×2mm Al heat sink 100 (3)Without heat sink (P =3.0W ( (2) ( 100 125 150 Ambient temperature T (°C) a  CE(sat = =100˚C C 25˚C –25˚C ...

Page 3

... Ta=25˚C and under natural convection. th (1)P =10V×0.2A(2W) and without heat sink T (2)P =10V×1.0A(10W) and with a 100×100×2mm Al heat sink −1 10 −4 −3 −2 − Time t (s) (1) ( SJD00210BED 2SD1705 3 ...

Page 4

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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