2sd161605 Unisonic Technologies, 2sd161605 Datasheet - Page 2

• Manufacturer Part Number: 2sd161605
• Description: Npn Silicon Transistor
• Manufacturer: Unisonic Technologies

2SD1616/A
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base Emitter On Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Transition Frequency
Output Capacitance
Turn On Time
Storage Time
Fall Time
ELECTRICAL CHARACTERISTICS
CLASSIFICATION OF h
2. Pulse width≤10ms, Duty cycle<50%
ABSOLUTE MAXIMUM RATINGS
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANK
h
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
FE1
PARAMETER
FE1
135 ~ 270
SYMBOL
V
V
Y
V
CE (SAT)
BE (SAT)
BE (ON)
I
h
h
I
t
C
t
CBO
EBO
STG
f
ON
FE1
FE2
t
T
F
ob
2SD1616
2SD1616A
2SD1616
2SD1616A
DC
Pulse(Note2)
(Ta=25°C)
(Ta=25°C, unless otherwise specified.)
I
I
V
V
V
V
V
V
V
V
I
V
C
C
B1
CE
CB
EB
CE
CE
CE
CB
CE
BE(OFF)
=1A, I
=1A, I
= -I
= 6V
=60V
=2V, I
=2V, I
=2V, I
=2V, I
=10V, f =1MHz
=10V, I
B2
TEST CONDITIONS
B
B
= -2 ~ -3V
=10mA
=50mA
=50mA
SYMBOL
C
C
C
C
=1A
=50mA
=100mA
=100mA
C
V
V
V
T
=100mA
I
P
T
CBO
CEO
EBO
I
CM
STG
C
200 ~ 400
C
J
G
2SD1616
2SD1616A
NPN SILICON TRANSISTOR
-55 ~ +150
RATINGS
+150
120
750
60
50
60
6
1
2
MIN
600
135
135
100
81
TYP
0.15
0.07
0.95
0.07
640
160
300 ~ 600
0.9
L
MAX UNIT
QW-R201-008.D
100
100
600
400
700
0.3
1.2
19
UNIT
mW
°C
°C
V
V
V
A
A
MHz
2 of 4
mV
μs
μs
μs
nA
nA
pF
V
V