2sd1679 Panasonic Corporation of North America, 2sd1679 Datasheet
2sd1679
Manufacturer Part Number
2sd1679
Description
Silicon Npn Epitaxial Planer Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1679.pdf
(3 pages)
Transistor
2SD1679
Silicon NPN epitaxial planer type
For low-frequency output amplification
*1
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
h
FE
Features
18V zener diode is built in between collector and base.
Low collector to emitter saturation voltage V
High foward current transfer ratio h
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings
Electrical Characteristics
Marking Symbol
Rank classification
Parameter
Rank
h
Parameter
FE
200 ~ 350
Symbol
V
V
V
I
I
P
T
T
NR
CP
C
R
C
j
stg
CBO
CEO
EBO
I
V
V
V
h
V
V
f
CBO
T
FE
(Ta=25˚C)
Symbol
CBO
CEO
EBO
CE(sat)
BE(sat)
*1
(Ta=25˚C)
FE
300 ~ 500
–55 ~ +150
.
Ratings
NS
S
18 5
18 5
200
150
0.5
5
1
V
I
I
I
V
I
I
V
CE(sat)
C
C
E
C
C
CB
CB
CE
= 10 A, I
= 1mA, I
= 10 A, I
= 0.5A, I
= 0.5A, I
= 10V, I
= 2V, I
400 ~ 800
= 5V, I
.
NT
T
C
E
B
B
B
Unit
mW
C
Conditions
E
E
˚C
˚C
V
V
V
A
A
= 0
= 0.5A
= 0
= 20mA
= 50mA
= –30mA, f = 200MHz
= 0
= 0
*2
*2
*2
Marking symbol :
Internal Connection
1:Base
2:Emitter
3:Collector
0.1 to 0.3
0.65 0.15
0.4 0.2
min
200
13
13
B
5
1
2
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
0.13
0.92
170
N
typ
1.5
2.8
+0.2
–0.3
+0.25
–0.05
*2
Pulse measurement
C
E
max
100
800
0.4
1.2
23
23
3
0.65 0.15
Unit: mm
MHz
Unit
nA
V
V
V
V
V
1
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