2sd1412 Inchange Semiconductor Company, 2sd1412 Datasheet

no-image

2sd1412

Manufacturer Part Number
2sd1412
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
INCHANGE Semiconductor
isc
DESCRIPTION
·Low Collector Saturation Voltage
·Collector-Emitter Breakdown Voltage-
·Complement to Type 2SB1019
APPLICATIONS
·High current switching applications.
·Power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website:www.iscsemi.cn
SYMBOL
: V
: V
V
V
V
T
P
T
CBO
CEO
EBO
I
I
stg
C
B
C
J
CE(sat)
(BR)CEO
B
Silicon NPN Power Transistor
= 0.4V(Max)@ I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 50V (Min)
a
C
=25℃
=25℃
PARAMETER
C
= 4A
a
=25
℃)
-55~150
VALUE
150
70
50
30
5
7
1
2
UNIT
W
V
V
V
A
A
isc
Product Specification
2SD1412

Related parts for 2sd1412

2sd1412 Summary of contents

Page 1

... Base Current-Continuous B B Collector Power Dissipation @ T =25℃ Collector Power Dissipation @ T =25℃ Junction Temperature J Storage Temperature Range T stg isc Website:www.iscsemi.cn =25 ℃) a VALUE UNIT ℃ 150 ℃ -55~150 isc Product Specification 2SD1412 ...

Page 2

... 10V 1MHz test 1A 0.3A 10Ω 30V 2SD1412 MIN TYP. MAX UNIT 50 V 0.4 V 1.2 V μA 30 μ 240 30 250 pF 10 MHz μs 0.2 μs 2.5 μs 0.5 ...

Related keywords