2sd1416 Inchange Semiconductor Company, 2sd1416 Datasheet
2sd1416
Manufacturer Part Number
2sd1416
Description
Isc Silicon Npn Darlington Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1416.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SD1416
Manufacturer:
TOSHIBA
Quantity:
12 000
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
·Collector-Emitter Saturation Voltage-
·High DC Current Gain
·Complement to Type 2SB1021
APPLICATIONS
·Hammer driver,pulse motor drive applications.
·High power switching applications.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
: V
: V
: h
V
V
V
T
P
T
CBO
CEO
EBO
I
I
stg
C
B
C
FE
J
(BR)CEO
CE(sat)
B
Silicon NPN Darlington Power Transistor
= 2000(Min) @ I
= 1.5V(Max) @I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
= 80V(Min)
C
=25℃
PARAMETER
C
= 3A, V
C
= 3A
CE
= 3V
a
=25
℃)
-55~150
VALUE
150
0.2
80
80
30
5
7
UNIT
℃
℃
W
V
V
V
A
A
isc
Product Specification
2SD1416
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2sd1416 Summary of contents
Page 1
... Emitter-Base Voltage EBO I Collector Current-Continuous C I Base Current-Continuous B B Collector Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi. =25 ℃) a VALUE UNIT 0 ℃ 150 ℃ -55~150 isc Product Specification 2SD1416 ...
Page 2
... 80V 5V 3A 2000 7A 1000 6mA 15Ω 45V =20μs; Duty Cycle≤ 2SD1416 MIN TYP. MAX UNIT 80 V 1.5 V 2.0 V 2.5 V μA 100 3.0 mA 15000 μs 0.8 μs 3.0 μs 2.5 ...