2sd1437 Inchange Semiconductor Company, 2sd1437 Datasheet
2sd1437
Manufacturer Part Number
2sd1437
Description
Isc Silicon Npn Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1437.pdf
(2 pages)
INCHANGE Semiconductor
isc
DESCRIPTION
·Collector-Emitter Breakdown Voltage
·Complement to Type 2SB1033
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for low frequency power amplification.
ABSOLUTE MAXIMUM RATINGS(T
isc Website：www.iscsemi.cn
SYMBOL
V
V
:V
V
T
P
T
CBO
CEO
EBO
I
stg
C
(BR)CEO
C
J
Silicon NPN Power Transistor
= 60V(Min)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Total Power Dissipation
@ T
Junction Temperature
Storage Temperature Range
C
=25℃
PARAMETER
a
=25
℃)
-55~150
VALUE
150
80
60
40
5
3
UNIT
W
℃
℃
V
V
V
A
isc
Product Specification
2SD1437
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2sd1437 Summary of contents
Page 1
... CBO V Collector-Emitter Voltage CEO V Emitter-Base Voltage EBO I Collector Current-Continuous C Total Power Dissipation =25℃ Junction Temperature J Storage Temperature Range T stg isc Website：www.iscsemi.cn =25 ℃) a VALUE UNIT ℃ 150 ℃ -55~150 isc Product Specification 2SD1437 ...
Page 2
... 60V ; 5V 0. 10V 1MHz E CB test 2 2SD1437 MIN TYP. MAX UNIT 1.0 V 1.5 V μA 10 μ 320 8 MHz 90 pF ...