2sd1259a Panasonic Corporation of North America, 2sd1259a Datasheet
2sd1259a
Manufacturer Part Number
2sd1259a
Description
Silicon Npn Triple Diffusion Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1259A.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2sd1259a-Q
Manufacturer:
SANYO
Quantity:
137
Part Number:
2sd1259a-Q
Manufacturer:
SANYO/三洋
Quantity:
20 000
Power Transistors
2SD1259, 2SD1259A
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
*
Note: Ordering can be made by the common rank (PQ rank h
h
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff
current
Collector cutoff current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
FE
Features
High foward current transfer ratio h
Satisfactory linearity of foward current transfer ratio h
N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings
Electrical Characteristics
Rank
Rank classification
h
FE
Parameter
Parameter
500 to 1000 800 to 1500 1200 to 2500
2SD1259
2SD1259A
2SD1259
2SD1259A
T
Ta=25 C
C
Q
=25 C
2SD1259
2SD1259A
2SD1259
2SD1259A
Symbol
V
V
V
I
I
I
P
T
T
CP
C
B
P
C
j
stg
CBO
CEO
EBO
I
I
I
V
h
V
f
CES
CEO
EBO
T
FE
(T
Symbol
CEO
CE(sat)
*
C
(T
FE
=25˚C)
–55 to +150
C
Ratings
=25˚C)
O
100
150
1.3
80
60
80
40
6
6
3
1
V
V
V
V
I
V
I
V
C
C
CE
CE
CE
CB
CE
CE
= 25mA, I
= 2A, I
= 80V, I
= 100V, I
= 40V, I
= 4V, I
= 12V, I
= 6V, I
FE
= 500 to 1500) in the rank classification.
B
FE
C
C
= 0.05A
Unit
Conditions
E
B
C
W
˚C
˚C
B
V
V
V
A
A
A
= 0.5A
= 0
E
= 0
= 0
= 0.2A, f = 10MHz
= 0
= 0
1
1
5.08 0.5
5.08 0.5
min
8.5 0.2
6.0 0.5
500
8.5 0.2
6.0 0.3
60
80
2
2
3
3
2.54 0.3
2.54 0.3
0.8 0.1
0.8 0.1
1.5max.
typ
50
1.1 max.
R0.5
R0.5
1:Base
2:Collector
3:Emitter
N Type Package (DS)
2500
max
100
100
100
100
1:Base
2:Collector
3:Emitter
N Type Package
3.4 0.3
1
3.4 0.3
1.0 0.1
0 to 0.4
Unit: mm
0.5max.
Unit: mm
1.0 0.1
1.1max.
MHz
Unit
V
V
A
A
A
1
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2sd1259a Summary of contents
Page 1
... Power Transistors 2SD1259, 2SD1259A Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Features High foward current transfer ratio h Satisfactory linearity of foward current transfer ratio h N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. ...
Page 2
... A ) Collector current — t th( –1 10 –2 10 –4 –3 –2 – Time 2SD1259, 2SD1259A I — 25˚C 4 –25˚C T =100˚ 0.2 0.4 0.6 0.8 1.0 1 Base to emitter voltage — 10000 V =12V CE f=10MHz ...