2sd1251a Panasonic Corporation of North America, 2sd1251a Datasheet
2sd1251a
Manufacturer Part Number
2sd1251a
Description
Silicon Npn Triple Diffusion Junction Type For Power Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1251A.pdf
(3 pages)
Power Transistors
2SD1251A
Silicon NPN triple diffusion junction type
For power amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• Wide safe operation area
• N type package enabling direct soldering of the radiating fin to the
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Collector-emitter sustaining voltage
Forward current transfer ratio
Base-emitter voltage
Collector-emitter saturation voltage
Transition frequency
printed circuit board, etc. of small electronic equipment.
2. * 1: Rank classification
* 2: V
Parameter
CEO(SUS)
Rank
Parameter
h
FE2
test circuit
T
30 to 60
a
= 25°C
Q
50 Hz/60 Hz
mercury relay
* 2
C
Symbol
V
V
V
V
= 25°C ± 3°C
Symbol
T
V
I
h
P
CEO(SUS)
I
I
T
CBO
CEO
EBO
C
CP
I
I
h
C
B
stg
FE2
V
CE(sat)
C
120 Ω
CBO
EBO
j
f
FE1
50 to 100
= 25°C
BE
T
6 V
* 1
P
−55 to +150
Rating
V
V
I
V
V
V
I
V
C
C
150
1.3
CB
EB
CE
CE
CE
CE
80
80
30
= 0.2 A, L = 25 mH
= 2 A, I
8
4
6
1
SJD00168CED
= 8 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 10 V, I
= 20 V, I
80 to 160
1 Ω
B
= 0.4 A
C
C
C
C
O
Conditions
Unit
C
E
= 0
= 0.1 A
= 1 A
= 1 A
°C
°C
W
V
V
V
A
A
A
= 0
= 0.2 A, f = 0.5 MHz
15 V
L
Note) Self-supported type package is also prepared.
X
Y
G
1
8.5
6.0
2
±0.2
±0.2
Min
80
40
30
3
2.54
1.4
5.08
0.8
±0.1
±0.5
±0.3
±0.1
Typ
0 to 0.4
R = 0.5
1
R = 0.5
1.0
±0.1
Max
(8.5)
(6.0)
(6.5)
160
1.2
1.0
30
1
3.4
1.0
N-G1 Package
0.4
1 : Base
2 : Collector
3 : Emitter
±0.3
±0.1
±0.1
1.3
Unit: mm
MHz
Unit
mA
µA
V
V
V
1
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2sd1251a Summary of contents
Page 1
... Power Transistors 2SD1251A Silicon NPN triple diffusion junction type For power amplification ■ Features • Wide safe operation area • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. ■ Absolute Maximum Ratings T Parameter ...
Page 2
(1)T =Ta C (2)With a 50×50×2mm Al heat sink (3)Without heat sink 40 (P =1.3W (2) ( 120 160 ( °C ) Ambient temperature ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...