2sd1295 Panasonic Corporation of North America, 2sd1295 Datasheet
2sd1295
Manufacturer Part Number
2sd1295
Description
Silicon Pnp Epitaxial Planar Type For Low-frequency Output Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1295.pdf
(4 pages)
Power Transistors
2SD1295
Silicon NPN epitaxial planar type
For low-frequency output amplification
Complementary to 2SB0968
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: September 2003
• Possible to solder radiation fin directly to printed circuit board
• Output of 4 W can be obtained by a complementary pair with
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emiter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emiter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2SB0968
2. * : Rank classification
Parameter
Parameter
Rank
h
FE
80 to 160
*
R
C
Symbol
V
V
V
= 25°C ± 3°C
Symbol
T
V
V
I
P
CBO
I
T
V
V
CEO
EBO
C
CP
I
I
I
stg
C
CE(sat)
BE(sat)
C
C
h
CBO
j
CEO
EBO
f
CBO
CEO
FE
= 25°C
T
ob
120 to 220
−55 to +150
S
Rating
I
I
V
V
V
V
I
I
V
V
C
C
C
C
150
CB
CE
EB
CE
CE
CB
1.5
50
40
10
= 1 mA, I
= 2 mA, I
= 1.5 A, I
= 2 A, I
5
3
SJD00192AED
= 5 V, I
= 10 V, I
= 5 V, I
= 5 V, I
= 20 V, I
= 20 V, I
B
B
B
= 0.2 A
C
E
C
C
Conditions
Unit
B
E
E
= 0
= − 0.5 A, f = 200 MHz
= 0
= 1 A
= 0.15 A
= 0
°C
°C
W
V
V
V
A
A
= 0
= 0
= 0, f = 1 MHz
Note) Self-supported type package is also prepared.
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G2 Package
1
4.35
6.5
5.3
4.6
Min
50
40
80
2
±0.1
±0.1
±0.1
±0.1
3
2.3
Typ
150
0.75
35
±0.1
±0.1
1.0
0.1
±0.1
0.5
±0.05
Max
100
220
1.5
10
2.3
(4.35)
±0.1
1
1
(5.3)
(3.0)
±0.1
Unit: mm
0.5
MHz
Unit
µA
µA
µA
±0.1
pF
V
V
V
V
1
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2sd1295 Summary of contents
Page 1
... Power Transistors 2SD1295 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0968 ■ Features • Possible to solder radiation fin directly to printed circuit board • Output can be obtained by a complementary pair with 2SB0968 ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...
Page 2
... = 120 160 200 240 Ambient temperature T (°C) a BE(sat = =–25˚C C 25˚C 1 100˚C 0.1 0.01 0.01 0.1 1 Collector current I (A) C 120 f=1MHz T =25˚C ...
Page 3
... −1 10 −4 −3 −2 − Time t (s) free air SJD00192AED 2SD1295 3 ...
Page 4
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...