2sd1210 Inchange Semiconductor Company, 2sd1210 Datasheet
2sd1210
Manufacturer Part Number
2sd1210
Description
Isc Silicon Npn Darlington Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet
1.2SD1210.pdf
(2 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1210
Manufacturer:
NEC
Quantity:
20 000
INCHANGE Semiconductor
isc
DESCRIPTION
·High DC Current Gain
·Collector-Emitter Sustaining Voltage-
APPLICATIONS
·Designed for audio frequency power amplifier and low
ABSOLUTE MAXIMUM RATINGS(T
isc Website:www.iscsemi.cn
SYMBOL
: h
: V
speed high current switching industrial use.
V
V
V
T
I
P
CBO
CEO
EBO
I
CM
T
I
FE
stg
CEO(SUS)
C
B
C
Silicon NPN Darlington Power Transistor
j
B
= 1000(Min.)@ I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
= 100V(Min)
a
C
=25℃
=25℃
PARAMETER
C
= 10A
a
=25℃)
-55~150
VALUE
150
100
150
10
20
80
8
1
3
UNIT
℃
℃
W
V
V
V
A
A
A
isc
Product Specification
2SD1210
Related parts for 2sd1210
2sd1210 Summary of contents
Page 1
... B B Collector Power Dissipation @T =25℃ Collector Power Dissipation @T =25℃ Junction Temperature j Storage Temperature Range T stg isc Website:www.iscsemi.cn =25℃) a VALUE UNIT 150 V 100 ℃ 150 ℃ -55~150 isc Product Specification 2SD1210 ...
Page 2
... Website:www.iscsemi.cn isc Product Specification CONDITIONS I = 10A 25mA 10A 25mA 100V 8V 10A 1000 10A 25mA ≈ 50V R = 5Ω; 2SD1210 MIN TYP. MAX UNIT 1.5 V 2.0 V μ μs 1.0 μs 5.0 μs 2.0 ...