2sd1210 Inchange Semiconductor Company, 2sd1210 Datasheet

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2sd1210

Manufacturer Part Number
2sd1210
Description
Isc Silicon Npn Darlington Power Transistor
Manufacturer
Inchange Semiconductor Company
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SD1210
Manufacturer:
NEC
Quantity:
20 000
INCHANGE Semiconductor
isc
DESCRIPTION
·High DC Current Gain
·Collector-Emitter Sustaining Voltage-
APPLICATIONS
·Designed for audio frequency power amplifier and low
ABSOLUTE MAXIMUM RATINGS(T
isc Website:www.iscsemi.cn
SYMBOL
: h
: V
speed high current switching industrial use.
V
V
V
T
I
P
CBO
CEO
EBO
I
CM
T
I
FE
stg
CEO(SUS)
C
B
C
Silicon NPN Darlington Power Transistor
j
B
= 1000(Min.)@ I
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current- Continuous
Collector Power Dissipation
@T
Collector Power Dissipation
@T
Junction Temperature
Storage Temperature Range
= 100V(Min)
a
C
=25℃
=25℃
PARAMETER
C
= 10A
a
=25℃)
-55~150
VALUE
150
100
150
10
20
80
8
1
3
UNIT
W
V
V
V
A
A
A
isc
Product Specification
2SD1210

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2sd1210 Summary of contents

Page 1

... B B Collector Power Dissipation @T =25℃ Collector Power Dissipation @T =25℃ Junction Temperature j Storage Temperature Range T stg isc Website:www.iscsemi.cn =25℃) a VALUE UNIT 150 V 100 ℃ 150 ℃ -55~150 isc Product Specification 2SD1210 ...

Page 2

... Website:www.iscsemi.cn isc Product Specification CONDITIONS I = 10A 25mA 10A 25mA 100V 8V 10A 1000 10A 25mA ≈ 50V R = 5Ω; 2SD1210 MIN TYP. MAX UNIT 1.5 V 2.0 V μ μs 1.0 μs 5.0 μs 2.0 ...

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