2sd1205a Panasonic Corporation of North America, 2sd1205a Datasheet
2sd1205a
Manufacturer Part Number
2sd1205a
Description
Silicon Npn Epitaxial Planer Type Darlington For Low-frequency Amplification
Manufacturer
Panasonic Corporation of North America
Datasheet
1.2SD1205A.pdf
(3 pages)
Transistors
2SD1205, 2SD1205A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• Forward current transfer ratio h
• A shunt resistor is omitted from the driver.
• M type package allowing easy automatic and manual insertion as well as
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SD1205
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage
(Emitter open)
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
priate to the driver circuit of motors and printer hammer: h
to 20 000.
stand-alone fixing to the printed circuit board.
2. * 1: Pulse measurement
* 2: Rank classification
Parameter
Parameter
Rank
h
FE
2SD1205
2SD1205A
2SD1205A
4 000 to 10 000 8 000 to 20 000
2SD1205
2SD1205A
2SD1205
2SD1205A
* 1, 2
* 1
FE
Q
* 1
is designed high, which is appro-
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
I
T
V
V
V
CBO
CEO
EBO
a
CP
I
I
C
stg
CE(sat)
BE(sat)
C
h
CBO
EBO
j
f
CBO
CEO
EBO
= 25°C
FE
T
−55 to +150
R
Rating
I
I
I
V
V
V
I
I
V
C
C
E
C
C
500
750
400
150
CB
CB
EB
CE
30
60
25
50
= 100 µA, I
= 100 µA, I
= 1 mA, I
= 500 mA, I
= 500 mA, I
5
SJC00211BED
= 4 V, I
= 10 V, I
= 10 V, I
= 25 V, I
FE
B
C
= 4 000
Conditions
E
Unit
mW
E
C
mA
mA
= 0
C
= 0
°C
°C
E
V
V
V
B
B
= −50 mA, f = 200 MHz
= 0
= 500 mA
= 0
= 0
= 0.5 mA
= 0.5 mA
Internal Connection
R 0.7
(1.5)
3
B
(2.5)
(0.85)
0.55
4 000
6.9
Min
(1.5)
30
60
25
50
5
±0.1
±0.1
2
R 0.9
(2.5)
Typ
1
≈ 200 Ω
150
20 000
Max
100
100
2.5
3
2.5
M-A1 Package
C
E
±0.1
1: Base
2: Collector
3: Emitter
0.45
Unit: mm
(1.0)
MHz
±0.05
Unit
nA
nA
V
V
V
V
V
1
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2sd1205a Summary of contents
Page 1
... Transistors 2SD1205, 2SD1205A Silicon NPN epitaxial planar type darlington For low-frequency amplification ■ Features • Forward current transfer ratio h FE priate to the driver circuit of motors and printer hammer 000. • A shunt resistor is omitted from the driver. • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. ■ ...
Page 2
... 500 400 300 200 100 100 120 140 160 ( °C ) Ambient temperature T a 100 000 = 75° 25°C 10000 −25°C 1 000 100 10 0.01 0 Collector current ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...