2sd1280g Panasonic Corporation of North America, 2sd1280g Datasheet
2sd1280g
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2sd1280g Summary of contents
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... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SD1280G Silicon NPN epitaxial planar type For low-voltage type medium output power amplification ■ Features • Low collector-emitter saturation voltage V • Satisfactory operation performances at high efficiency with the low- voltage power supply. ...
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... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1280G 1.2 Copper plate at the collector 2 is more than area, 1 thickness 1.0 0.8 0.6 0.4 0 100 120 140 160 ( °C ) Ambient temperature T a 1 25° 1.0 0.8 0.6 0.4 0.2 0 ...
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... T I CEO 100 120 140 160 ( °C ) Ambient temperature T a SJD00340AED 2SD1280G Safe operation area 10 Single pulse = 25° 0.1 0.01 0.001 0 100 ( V ) Collector-emitter voltage ...
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... This product complies with the RoHS Directive (EU 2002/95/EC). 2SD1280G MiniP3-F2 4.50 1.60 1 0.40 ±0.08 1.50 ±0.10 (5°) 3.00 4 ±0.10 ±0. 0.50 ±0.08 ±0.15 SJD00340AED Unit: mm 1.50 ±0.10 0.41 ±0.03 (45°) ...
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Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...