2sd1583-z GUANGDONG KEXIN INDUSTRIAL CO.,LTD, 2sd1583-z Datasheet
2sd1583-z
Manufacturer Part Number
2sd1583-z
Description
Npn Silicon Epitaxial Transistor
Manufacturer
GUANGDONG KEXIN INDUSTRIAL CO.,LTD
Datasheet
1.2SD1583-Z.pdf
(2 pages)
SMD Type
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *1
Total power dissipation Ta = 25
Junction temperature
Storage temperature
* 1 Pulse Test PW
*2 When mounted on ceramic substrate of 7.5cm
Absolute Maximum Ratings Ta = 25
Features
Low V
High hFE.
CE(sat)
.
10ms, Duty Cycle
Parameter
NPN Silicon Epitaxial Transistor
*2
50%.
2
X0.7mm
2SD1583-Z
Symbol
V
V
V
T
I
P
CBO
CEO
EBO
I
CP
T
stg
C
T
j
-55 to +150
Rating
150
30
20
5
2
3
2
2.3
6.50
4.60
5.30
+0.15
-0.15
+0.15
-0.15
+0.2
-0.2
0.80
TO-252
+0.1
-0.1
Unit
W
V
V
V
A
A
0.60
+0.1
-0.1
0.127
max
0.50
-0.7
+0.8
www.kexin.com.cn
2.30
Transistors
+0.1
-0.1
Unit: mm
1 Base
2 Collector
3 Emitter
1
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2sd1583-z Summary of contents
Page 1
... Absolute Maximum Ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) *1 Total power dissipation Junction temperature Storage temperature * 1 Pulse Test PW 10ms, Duty Cycle *2 When mounted on ceramic substrate of 7.5cm 2SD1583-Z Symbol Rating V 30 CBO V 20 CEO V 5 EBO I 2 ...
Page 2
... Collector saturation voltage * Base saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Fall time * Pulsed: PW 350 ìs, duty cycle h Classification FE Marking M hFE 800 1600 2 www.kexin.com.cn 2SD1583-Z Symbol Testconditons CBO EBO ...